Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories

Surendranathan, Umeshwarnath; Kumari, Preeti; Wasiolek, Maryla; Hattar, Khalid Mikhiel; Boykin, Timothy B.; Ray, Biswajit

doi:10.1109/tns.2021.3059186

Cited by 11 publications

(1 citation statement)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even distribution is beneficial to improving the cell endurance and reliability. Thus, randomization is an integral feature in state-of-the-art NAND flash chips [39].…”

Section: Validity Of the Proposed Technique For Arbitrary Image Datamentioning

confidence: 99%

EXPRESS: Exploiting Energy–Accuracy Tradeoffs in 3D NAND Flash Memory for Energy-Efficient Storage

2022

Self Cite

View full text Add to dashboard Cite

The density and cost-effectiveness of flash memory chips continue to increase, driven by: (a) The continuous physical scaling of memory cells in a single layer; (b) The vertical stacking of multiple layers; and (c) Logical scaling through storing multiple bits of information in a single memory cell. The physical properties of flash memories impose disproportionate latency and energy expenditures to ensure the high integrity of the data during flash memory writes. This paper experimentally explores this disproportionality on state-of-the-art commercial 3D NAND flash memories and introduces EXPRESS—a technique for increasing the energy efficiency of flash memory writes by exploiting the premature termination of the flash write operations. An experimental evaluation shows that EXPRESS reduces energy expenditures by 20–50%, relative to the traditional flash writes, at the cost of a minimal loss in the data integrity (<1%). In addition, we evaluate the effects of the page-to-page variability, program–erase cycling, and data retention on the implementation of EXPRESS, and we propose enhancements to counter these effects.

show abstract

“…Even distribution is beneficial to improving the cell endurance and reliability. Thus, randomization is an integral feature in state-of-the-art NAND flash chips [39].…”

Section: Validity Of the Proposed Technique For Arbitrary Image Datamentioning

confidence: 99%