Gamma-Ray Irradiation Induced Dielectric Loss of SiO₂/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Abstract

The performance of integrated circuits (ICs) deteriorates under irradiation. It is commonly believed that passive components in the IC such as through-silicon vias (TSVs) are insensitive to radiation damages. However, we find a counterexample by studying the effect of gamma-ray irradiation on a TSV, where its alternating current (AC) properties change significantly due to an emerging dielectric loss peak after irradiation, and the peak shifts toward lower frequencies at higher radiation doses. We propose a mechanism of the observed irradiation effect on the AC properties based on correlations between macroscopic and microscopic phenomena, and the emerging dielectric loss peak is attributed to the formation of a layer of border oxide traps (BTs). The defect-based analysis indicates that the AC dielectric loss due to gammaray irradiation is not restricted to TSVs but should also be applicable to other semiconductor devices with Si/SiO 2 interfaces. Our work provides not only an approach for the quantitative characterization of BTs but also a practical approach to resist AC irradiation damage at the circuit or material level.

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

“…Another extra functions which can be regarded as an advantage is the band filtering properties that suit 6 G and Bluetooth technology. On the other hand employment of silicon substrates for the design of Ag/n-Si/Au/p/ZnPc/Pt devices is an additional advantage due to its radiation resistance [43]. Silicon wafers with enhanced surface properties can maximize the functionality of electronic devices [44].…”

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

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