GaN/AlGaN intersubband optoelectronic devices

Machhadani, H.; Kandaswamy, P.; Sakr, S.; Vardi, Alon; Wirtmüller, A; Nevou, L.; Guillot, Fabien; Pozzovivo, G.; Tchernycheva, Maria; Lupu, Anatole; Vivien, Laurent; Crozat, P.; Warde, E.; Bougerol, Catherine; Schacham, S. E.; Strasser, G.; Bahir, G.; Monroy, E.; Julien, F. H.

doi:10.1088/1367-2630/11/12/125023

Cited by 90 publications

(70 citation statements)

References 57 publications

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“…2,13,16,27,[30][31][32] If the lead composition and lattice constant is the same on both sides of the active region, so P 0 = P N , the polar contributions to the electrical field vanish in the leads because the net charge produced by the polarization-induced charge in the active structure is zero:…”

Section: A Depletion and Inversion Regionsmentioning

confidence: 99%

“…This result relates to an earlier observation that, by using the same alloy composition in the active region as in the cladding layers, good control over the electron population can be achieved. 2,17 …”

Section: Examples Of Applicationsmentioning

confidence: 99%

“…This demand arises because the large band offset and heavy conduction electron mass ∼(0.2-0.3) m 0 weaken the coupling between states in adjacent quantum wells. The wide depletion regions and two-dimensional electron gases (2DEGs) forming at the two sides of an active region 2,4,[15][16][17] exacerbates this challenge for devices based on perpendicular quantum transport. For instance, in resonant-tunneling diodes and QC lasers, the depletion regions make it difficult to simultaneously obtain efficient current injection and control over the alignment of levels and transitions in the structure.…”

Section: Introductionmentioning

confidence: 99%

“…14,[18][19][20][21][22][23] A related issue exists for structures operating at zero bias (like absorption structures), especially those of only a few layers: As electrons accumulate in the 2DEG, the active region is depleted. 2,4,16,17 To tackle some of the design problems, we here introduce the two related concepts of polarization balance and polarization-balanced design. A structure is polarization balanced when the unscreened field vanishes in the cladding layers (buffer and cap) layers.…”

Section: Introductionmentioning

confidence: 99%

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Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2011

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Inversion and depletion regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double-barrier structures with AlxGa 1−x N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active region they remove the depletion barriers.

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Section: A Depletion and Inversion Regionsmentioning

confidence: 99%

Section: Examples Of Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2011

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“…10 The built-in field can be extremely strong up to 10 MV/cm for AlN/GaN QWs. 11 The presence of this internal field complicates the design of ISB devices 12 since it induces band bending effects and the formation of depletion/accumulation regions, while reducing the oscillator strength associated with the ISB transition. For optoelectronic applications, it is, therefore, desirable to reduce the internal electric field.…”

mentioning

confidence: 99%

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

Machhadani

Beeler

Sakr

et al. 2013

Journal of Applied Physics

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We report on the observation of intersubband absorption in GaN/AlN quantum well superlattices grown on ð11 22Þ-oriented GaN. The absorption is tuned in the 1:5-4:5 lm wavelength range by adjusting the well thickness. The semipolar samples are compared with polar samples with identical well thickness grown during the same run. The intersubband absorption of semipolar samples shows a significant red shift with respect to the polar ones due to the reduction of the internal electric field in the quantum wells. The experimental results are compared with simulations and confirm the reduction of the polarization discontinuity along the growth axis in the semipolar case. The absorption spectral shape depends on the sample growth direction: for polar quantum wells the intersubband spectrum is a sum of Lorentzian resonances, whereas a Gaussian shape is observed in the semipolar case. This dissimilarity is explained by different carrier localization in these two cases. V C 2013 AIP Publishing LLC [http://dx

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Inter Sub‐band Devices

2023

Group III‐Nitride Semiconductor Optoelectronics

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GaN/AlGaN intersubband optoelectronic devices

Cited by 90 publications

References 57 publications

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

Inter Sub‐band Devices

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