GaN as a radiation hard particle detector

Grant, James P.; Bates, R. L.; Cunningham, W. R.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O’Shea, V.

doi:10.1016/j.nima.2007.01.121

Cited by 78 publications

(50 citation statements)

References 16 publications

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“…1(b). 6,12 An Ohmic contact on the highly doped buffer layer is realized by etching through the epi-GaN layer. Polyakov et al…”

Section: Mesa Structurementioning

confidence: 99%

“…Commonly used neutron converters are 10 B, 6 Li, and 157 Gd, 94 and the converter can either be coated directly onto the surface of the GaN as a thin-film or be incorporated by doping, 95,96 as illustrated in Fig. 5.…”

Section: Neutron Detectionmentioning

confidence: 99%

“…4 GaN can also be used for detecting ionizing radiation under extreme radiation conditions due to its properties such as a wide band-gap (3.39 eV), large displacement energy (theoretical values averaging 109 6 2 eV for N and 45 eV for Ga), 5 and high thermal stability (melting point: 2500 C). 6 Compared to narrower band-gap semiconductors such as silicon, GaN can operate at higher temperatures; while a comparison with other wide band-gap semiconductors, such as silicon carbide, demonstrates GaN's higher electron mobility 7 and potential for better carrier transport properties. In addition, the high Z-value and density of GaN makes it a suitable material for X-ray detection in medical imaging.…”

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confidence: 99%

“…Based on these different types of materials, various GaN sensor structures have been fabricated for ionizing radiation detectors. For a-particle detectors, the lateral double-Schottky contact (DSC), [8][9][10] mesa, 6,12,13,19 sandwich, 14,20 and p-i-n structures 21 have been tested. For X-ray detectors, Schottky Metal-Semiconductor-Metal (MSM), 15 Schottky diode, 16,17 and p-i-n structures 22 have all been reported.…”

mentioning

confidence: 99%

“…For electron detection, the applications for making betavoltaic energy converters, 23,24 using pn, 25 p-i-n, 23,[26][27][28] and Schottky type 29 structures have now been tested. Thermal neutron detection using a 6 Li converter in a sandwich structure has been recently reported. 20 The nuclear reaction presented by 14 N(n,p) 14 C (1.8 b for neutron at 0.025 eV) and a various other threshold reactions producing charged particles suggest that GaN is intrinsically sensitive to neutrons, including fast neutron, e.g., at 1 MeV or above.…”

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confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…1(b). 6,12 An Ohmic contact on the highly doped buffer layer is realized by etching through the epi-GaN layer. Polyakov et al…”

Section: Mesa Structurementioning

confidence: 99%

Section: Neutron Detectionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Ultrahigh gain AlGaN/GaN high energy radiation detectors

Howgate

Hofstetter

Schoell

et al. 2012

Physica Status Solidi (a)

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Due to its remarkable tolerance to high energy ionizing radiation, GaN has recently attracted attention as a promising material for dosimetry applications. However, materials issues that lead to persistent photoconductivity, poor sensitivity, and requirements for large operational voltages have been hurdles to realization of the full potential of this material. Here we demonstrate that the introduction of a two-dimensional electron gas channel, through the addition of AlGaN/GaN heterointerfaces, can be used to create intrinsic amplification of the number of electrons that can be collected from single ionization events, yielding exceptionally large sensitivities in ultralow dose rate regimes. Furthermore, anomalous photo-responses, which severely limit response times of GaN-based devices, can be eliminated using these heterostructures. Measurements using focused monochromatic synchrotron radiation at 1-20 keV, as well as focused 20 MeV protons, reveal that these devices provide the capability for high sensitivity and resolution real time monitoring, which is competitive with and complementary to state-of-the-art detectors. Therefore, AlGaN/GaN heterostructure devices are extremely promising for future applications in fields ranging from high energy physics to medical imaging.

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GaN as a radiation hard particle detector

Cited by 78 publications

References 16 publications

Review of using gallium nitride for ionizing radiation detection

Review of using gallium nitride for ionizing radiation detection

Radiation Damage in GaN‐Based Materials and Devices

Ultrahigh gain AlGaN/GaN high energy radiation detectors

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