GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Sang, Wei-hua; Lü, Lin; Wang, Long; Min, Jiahua; Zhu, Jinlong; Wang, Qiao‐Chun

doi:10.1007/s11801-016-5251-y

Cited by 9 publications

(1 citation statement)

References 17 publications

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“…As a new type of material with a photonic band gap, photonic crystals play an important role in modern optical systems, such as photonic crystal fibers, waveguides, lowthreshold lasers, multifunctional sensors, cavity quantum electrodynamics, and quantum information processing [1][2][3][4][5][6]. Over the past decades, many techniques have been developed for the fabrication of photonic crystals, of which the laser interference lithography (LIL) is a powerful technology due to its low cost, short time consumption, and lack of necessity for precise focusing.…”

Section: Introductionmentioning

confidence: 99%

Contrast Analysis of Polarization in Three-Beam Interference Lithography

Peng

et al. 2021

Applied Sciences

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This paper analyzes the effect of polarization and the incident angle on the contrasts of interference patterns in three-beam interference lithography. A non-coplanar laser interference system was set up to simulate the relationship between contrast, beam polarization, and the incident angle. Different pattern periods require different incident angles, which means different contrast losses in interference lithography. Two different polarization modes were presented to study the effects of polarization with different incident angles based on theoretical analysis simulations. In the case of the co-directional component TE polarization mode, it was demonstrated that the pattern contrast decreases with the increase in the incident angle and the contrast loss caused by the polarization angle error also grew rapidly. By changing the mode to azimuthal (TE-TE-TE) polarization, the contrast of the interference pattern can be ensured to remain above 0.97 even though the incident angle is large. In addition, TE-TE-TE mode can accept larger polarization angle errors. This conclusion provides a theoretical basis for the generation of high-contrast light fields at different incident angles, and the conclusion is also applicable to multi-beam interference lithography.

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