GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

Kuring, Carsten; Wolf, Mihaela; Geng, Xiaomeng; Hilt, Oliver; Böcker, Jan; Würfl, Joachim; Dieckerhoff, Sibylle

doi:10.1109/tpel.2022.3172659

Cited by 17 publications

(4 citation statements)

References 30 publications

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“…Both GaN MIS-HEMT and Si MOSFET chips are adopted on an aluminum nitride (AlN) substrate. For decades, AlN ceramics are promising option for power electronics packaging due to their high thermal conductivity (>170 W m −1 K −1 ) and strong electrical isolation [28]. A top view of the chip-on-board and the substrate layout assemblies for the two cascode switches is shown in figure 3(b).…”

Section: Multi-gan-chip Cascode Module Processmentioning

confidence: 99%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Elangovan

Cheng

Jang

et al. 2023

Semicond. Sci. Technol.

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A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the power rating. An optimized symmetric configuration and wire bonding of an integral package are used in the cascode switch. By utilizing an optimized packaging approach, the performance of the multi-GaN-chip cascode switch was evaluated through both static and dynamic characterizations. The constructed cascode switch provides a low-static on-state resistance of 72 mΩ and an off-state blocking capability of 400 V with a positive threshold voltage of 2 V. Analysis of dynamic switching characteristics are discussed and demonstrates stable dynamic on-state resistance (RDS-ON) in inductive load circuits with switching dependencies of voltage, frequency, time, and temperature. The extended defects from buffer caused a minimal decrease in dynamic and static RDS-ON with respect to hard switching conditions. However, there was no noticeable degradation in RDS-ON under harsh switching conditions. This study provides a complete analysis of the multi-GaN-chip cascode switch, including MIS-HEMT manufacturing, cascode packaging and static and dynamic characterizations.

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Section: Multi-gan-chip Cascode Module Processmentioning

confidence: 99%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Elangovan

Cheng

Jang

et al. 2023

Semicond. Sci. Technol.

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“…9. The area of the overall drive chip is 1.7*1.8mm 2 , where the area of the half-bridge adaptive load gate drive circuit proposed in this paper is 0.7*0.8mm 2 . The photo also shows the location of the input receiver and dead time, level shift, protection circuit, bootstrap diode, etc.…”

Section: Test Analysismentioning

confidence: 99%

“…GaN HEMTs have significant advantages over silicon MOSFETs and are more suitable for high voltage and high frequency applications. The research of GaN driver technology has become a hot spot at present [1,2,3,4,5]. In general, the output drive current of GaN half-bridge driver is fixed.…”

Section: Introductionmentioning

confidence: 99%

Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current

Li,

Zhou,

Huang

et al. 2023

IEICE Electron. Express

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In this paper, a half-bridge gate driver with adaptive output current for GaN HEMTs is introduced. The output drive current of the driver is adapted to the load of GaN HEMTs, by adjusting the W/L size of drive transistors. The rise time of driver is achieved to be basically constant by the adaptive output current adjustment for different load, so noise can be effectively immunized and working efficiency is improved. Based on the proposed adaptive output current drive circuit, a halfbridge gate driver is designed and implemented in the 180nm BCD process. Tested results show the driver has a constant rise time of about 5ns under 5MHz with C L of 0.5nF, 2.0nF, and 3.5nF respectively.

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“…AlGaN/GaN high electron mobility transistors (HEMTs) have attracted great attention in high-frequency and high-power electronics owing to the excellent material properties such as high carrier mobility, high-density carriers of two-dimensional electron gas (2DEG), and high critical breakdown field. [1][2][3][4][5][6][7][8][9] However, due to the fact that devices operate at high voltage and high frequency, parasitic inductance and capacitance affect the switching characteristics of devices, making it difficult to accurately model the switching process of GaN devices. [10][11][12][13][14][15] In recent years, there have been many studies of modeling the switching characteristics of GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

Luo

Zhao

et al. 2023

Physica Status Solidi (a)

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This paper analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors (HEMTs) based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus, resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs is investigated and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring, increasing the gate resistance of inactive switch can be significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.This article is protected by copyright. All rights reserved.

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GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

Cited by 17 publications

References 30 publications

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

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