GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

Abstract

GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

“…After the material growth, wafter bonding, wet chemical etching, and so on, were used to fabricate p-side down GaN-on-Si(100) microdisk laser as shown in Figure 3b. Since the Cl-based ICP etching often causes surface roughness, especially for N-face high-Al-composition AlGaN material, a chemical mechanical polishing technology with silica solution was developed to smooth the N-face n-GaN surface, 31 followed by the fabrication of ohmic contact at room temperature. 32 Thus, a sharp interface does exist between n-type ohmic contact metal and N-face n-GaN, which was evidenced (Figure 3b), paving the way for the fabrication of sidewall cavity facet.…”