GaN betavoltaic energy converters

Honsberg, Christiana B.; Doolittle, W. Alan; Allen, Mark G.; Wang, C.

doi:10.1109/pvsc.2005.1488079

Cited by 26 publications

(14 citation statements)

References 10 publications

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“…Theoretical calculations from a conceptual design 24,91 utilized two GaN pn junctions sandwiched with a 63 Ni radioisotope source (with a half-life of 100 yr). The results indicated a maximum short circuit current of 1.1 lA/cm 2 , maximum open circuit voltage of 2.7 V, and ideal efficiency of 25%.…”

Section: Betavoltaic Applicationmentioning

confidence: 99%

“…For X-ray detectors, Schottky Metal-Semiconductor-Metal (MSM), 15 Schottky diode, 16,17 and p-i-n structures 22 have all been reported. For electron detection, the applications for making betavoltaic energy converters, 23,24 using pn, 25 p-i-n, 23,[26][27][28] and Schottky type 29 structures have now been tested. Thermal neutron detection using a 6 Li converter in a sandwich structure has been recently reported.…”

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confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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Section: Betavoltaic Applicationmentioning

confidence: 99%

mentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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“…The saturation of I sc in terms of the increase in CPS is expected to occur based on the limited size of the absorber surface for the given thicknesses of the absorber and irradiator. A larger surface area for the entry of beta particles into the absorber results in greater energy deposition and higher power generation for the betavoltaic cells .…”

Section: Measurement Resultsmentioning

confidence: 99%

Evaluation of a betavoltaic energy converter supporting scalable modular structure

Wook

김진주

et al. 2018

ETRI Journal

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Distinct from conventional energy‐harvesting (EH) technologies, such as the use of photovoltaic, piezoelectric, and thermoelectric effects, betavoltaic energy conversion can consistently generate uniform electric power, independent of environmental variations, and provide a constant output of high DC voltage, even under conditions of ultra‐low‐power EH. It can also dramatically reduce the energy loss incurred in the processes of voltage boosting and regulation. This study realized betavoltaic cells comprised of p‐i‐n junctions based on silicon carbide, fabricated through a customized semiconductor recipe, and a Ni foil plated with a Ni‐63 radioisotope. The betavoltaic energy converter (BEC) includes an array of 16 parallel‐connected betavoltaic cells. Experimental results demonstrate that the series and parallel connections of two BECs result in an open‐circuit voltage Voc of 3.06 V with a short‐circuit current Isc of 48.5 nA, and a Voc of 1.50 V with an Isc of 92.6 nA, respectively. The capacitor charging efficiency in terms of the current generated from the two series‐connected BECs was measured to be approximately 90.7%.

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“…36,37 It was assumed that all EHPs created in the depletion region along the trajectory of betas and within one minority carrier diffusion length from the depletion region can be collected as current in the simulations. 38,39 Decreasing the doping concentration in the p-region in p-i-n devices will increase the depletion region width and thus increase the EHPs produced by beta particles along the way. However, the doping concentration decrease will cause higher leakage currents.…”

Section: Simulation Of Beta Particle Penetration In Ganmentioning

confidence: 99%

Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery

Aydın¹,

Kam

2019

Int J Energy Res

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Summary This work describes the theoretical and experimental investigation of an in‐house produced 63Ni radioisotope‐powered GaN‐based direct conversion (betavoltaic) nuclear battery. GaN p‐n junction device with 1‐mm2 area was fabricated and irradiated by the 63Ni plate source. Short‐circuit current and open‐circuit voltage of the battery were measured, and current‐voltage curves were plotted. The energy stored in battery, maximum power, and efficiency parameters were calculated. Monte Carlo modelling was used to investigate radioisotope's self‐absorption effect, the optimization of semiconductor and source thickness, transport, and penetration of beta particles in semiconductor junction. A large fraction of beta particle energy emitted from 63Ni source is absorbed within 1 μm of the semiconductor junction on the basis of the simulation results. Epitaxial growth of GaN was performed using metal‐organic chemical vapour deposition (MOCVD) system. Monte Carlo simulation with MCNPX was used to determine optimum 63Ni radioactive film thickness. 63Ni film was electroplated on one face of 1‐mm2 copper plate and mounted 1 mm over the semiconductor device. A 63Ni source with an apparent activity of 0.31 mCi produced 0.1 ± 0.001 nA short‐circuit current (Isc), 0.65 V ± 0.0022 open‐circuit voltage (Voc), and 0.016 nW ± 0.0002 maximum power (Pmax) in the semiconductor device. The filling factor (FF) of the betavoltaic cell was 25%, and the conversion efficiency (ɳ) was 0.05%. Finally, experimental results were compared with theoretical calculations.

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GaN betavoltaic energy converters

Cited by 26 publications

References 10 publications

Review of using gallium nitride for ionizing radiation detection

Review of using gallium nitride for ionizing radiation detection

Evaluation of a betavoltaic energy converter supporting scalable modular structure

Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery

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