GaN codoping and annealing on the optoelectronic properties of SnO2 thin films

Zhou, Yawei; Xu, Wenwu; Lv, Shuliang; Yin, Chongshan; Li, Jingjing; Zhu, Bicheng; Liu, Yong; He, Chunqing

doi:10.1016/j.jallcom.2017.10.234

Cited by 16 publications

(5 citation statements)

References 33 publications

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“…In previous studies [8], it was proved that the ZATO films can significantly improve the conductivity and transparency of the ZnO films [9,10], so it shows great application potential. The main methods of thin film preparation include vacuum evaporation [11], electron beam deposition [12], chemical vapor deposition [13] and magnetron sputtering [14]. Among all of these, the magnetron sputtering has numerous advantages, such as high deposition rates, low substrate temperatures and good adhesion of the films on the substrate [15], which exhibits a lot of potential in depositing and growing the thin films [16].…”

Section: Introductionmentioning

confidence: 99%

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Zhang

et al. 2021

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The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

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Section: Introductionmentioning

confidence: 99%

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Zhang

et al. 2021

Coatings

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“…Many attempts have been made in the literature to develop SnO 2 photoanodes [12,13]. Nanostructured tin oxide (SnO 2 NP) is n-type semiconductor having good structural and optoelectronic properties [14,15]. SnO 2 NP and its composites find applications in photovoltaic cells, catalysis, gas sensors, antistatic coatings, transparent electrodes, etc.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of Alumina–Tin Oxide Nanocomposites Deposited on 1D Carbon Backbone

Ayachit

Kulkarni²,

Kulkarni³

2021

Nanosistemi, Nanomateriali, Nanotehnologii

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“…Đã có rất nhiều nỗ lực trong việc chế tạo SnO 2 loại p bằng cách pha tạp các nguyên tố đơn chất kim loại nhóm III, II, chẳng hạn như Ga, In, Sb, Zn[6][7][8][9][10][11] , phi kim N12,13 . Đặc biệt, các công trình nghiên cứu đồng pha tạp của các kim loại (Al, In, Ga) và N[14][15][16][17] hay hai kim loại Ga và In 18 để Trích dẫn bài báo này: Trấn L, Phúc D H. Ảnh hưởng pha tạp N đến tính chất cảm biến quang của cấu trúc dị thể p-SnO 2 đồng pha tạp Zn và N/ n-Si . Sci.…”

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Influence of N2 doping on photodective properties of p-typed Zn-N co-doped SnO2/n-Si heterojunction

Dang

2021

Sci. Tech. Dev. J. - Nat. Sci.

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This work studied the effects of Zn and N co-doping on the crystal structure, electrical properties, and photoelectric effects of p-typed Zn-N co-doped SnO2/n-Si heterojunction. Zn and N co-doped SnO2 films (ZNTO) were deposited on n-type Si substrates at 300oC in different sputtering gas mixture Ar/N2 (% N = 0%, 30%, 50%, 60%, 70 % and 80%) from 5 wt% ZnO doped SnO2 target by the DC magnetron sputtering method. The crystal structure, surface morphology, chemical composition, electrical properties, and photoelectric effects of ZNTO films were investigated by measurements such as X-ray diffraction, FESEM, AFM, EDS, Hall, and I-V. The results showed that all films had a rutile structure, and the SnO2 (101) reflection was dominant on the optimal fabrication of 70% N2. Substitution of Sn4+ by Zn2+ and O2􀀀 by N3􀀀 were determined by the X-ray diffraction pattern (XRD) and X-ray energy scattering spectrum (EDS). The lowest resistivity for the ZNTO-5-70 film was r= 6.5010􀀀2 W.cmwith carrier concentration n = 1.461019 cm􀀀3 and hole mobility m = 6.52 cm2.V􀀀1.s􀀀1 respectively. I-V characteristics of the p – ZNTO – 5 – y/n – Si under the illumination condition showed the p-type electrical properties and their application as optical sensors. The ZNTO – 5 – y films' optical response current characteristic had high sensitivity and good reproducibility.

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GaN codoping and annealing on the optoelectronic properties of SnO2 thin films

Cited by 16 publications

References 33 publications

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Optoelectronic Properties of Alumina–Tin Oxide Nanocomposites Deposited on 1D Carbon Backbone

Influence of N2 doping on photodective properties of p-typed Zn-N co-doped SnO2/n-Si heterojunction

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