GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature

Ma, Huan; He, Duanwei; Li, Lei; Wang, Shanmin; Chen, Ying; Wang, Haikuo

doi:10.1016/j.jallcom.2010.12.087

Cited by 21 publications

(10 citation statements)

References 26 publications

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“…So, the synthesis temperature decreases in our high pressure experiments. This has also been observed for some other materials, such as GaN crystal synthesis under HPHT [16]. The synthesis temperature of Cd 7 P 10 increases when the pressure is elevated from 2.0 to 4.5 GPa, which might indicate that the melting point of Cd versus the applied pressure has a positive slope.…”

Section: Resultssupporting

confidence: 66%

“…The optimal method is based on the reaction of the elemental components under high pressure and high temperature (HPHT). The HPHT method has been reported to be an effective way of synthesizing pure-phase, bulk and nearly fully densified polystalline samples such as GaN, ReB 2 , ZrC-SiC and B 6 O [ [16][17][18][19], while these materials are usually difficult to prepare at ambient pressures. Cadmium (Cd) and P have a low melting point and vaporize easily at ambient pressures.…”

Section: Introductionmentioning

confidence: 99%

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Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Wang

Peng

Guan

et al. 2012

High Pressure Research

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In this study, pure-phase Cd 7 P 10 crystals are prepared by the reaction of elements at high pressures in a largevolume cubic press. The synthetic Cd 7 P 10 samples are characterized by powder X-ray diffraction, scanning electron microscopy and diamond indentation method. The results show that orthorhombic Cd 7 P 10 grains with a size of over 70 μm could be obtained and that the high pressure well-sintered Cd 7 P 10 compacts have a Vickers hardness value of 8.9 GPa under a load of 49 N. The pressure-temperature formation region of Cd 7 P 10 is determined up to 5 GPa and 1500 • C, and the formative mechanism under high pressures is discussed. Our results exhibit a novel route for synthesizing bulk semiconductor polystalline Cd 7 P 10 compacts.

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Section: Resultssupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Wang

Peng

Guan

et al. 2012

High Pressure Research

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“…which can simply be viewed as ion exchange between Mo 6+ and B 3+ 14 32 40 , 41 42 . As expected, compositional analyses using EDX show the same Mo: N molar ratio for both phases.…”

Section: Resultsmentioning

confidence: 99%

The Hardest Superconducting Metal Nitride

Wang

Antonio

et al. 2015

Sci Rep

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Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

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“…To enhance the characteristics of GaN-based devices, the introduction of freestanding (FS) GaN substrates into the applicable devices is essential. To achieve high crystalline freestanding GaN crystals, a number of researchers have studied various growth methods [5][6][7][8][9][10]. Of these methods, the outstanding characteristics of hydride vapor phase epitaxy (HVPE) growth, with a high growth rate and a high crystalline growth capability, can provide significant advances to achieve freestanding GaN crystals with a large scalability and economic advantages [11].…”

Section: Introductionmentioning

confidence: 99%

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

Lee

Ahn

et al. 2020

Nanomaterials

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In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.

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GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature

Cited by 21 publications

References 26 publications

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

The Hardest Superconducting Metal Nitride

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

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GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature

Cited by 21 publications

References 26 publications

Cadmium phosphide, Cd7P10, prepared at high pressures

Cadmium phosphide, Cd7P10, prepared at high pressures

The Hardest Superconducting Metal Nitride

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

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Product

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Cadmium phosphide, Cd₇P₁₀, prepared at high pressures

Cadmium phosphide, Cd₇P₁₀, prepared at high pressures