GaN Device Modeling with X-Parameters

Horn, Jason; Root, David E.; Simpson, Gary M.

doi:10.1109/csics.2010.5619691

Cited by 56 publications

(40 citation statements)

References 7 publications

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“…where the model coefficients X F pm , X S pm,qn and X T pm,qn are the X-parameters, following the formulation and terminology introduced by Agilent in [13]; p and q are the port indexes (1, 2), m = (1, 2, …) and n = (1, 2, …) are the harmonic indexes; and P = e j/A 11 and |A 11 | represents the large-signal fundamental input stimulus. If the device operation region is confined to a part of the Smith Chart around a selected reference (Z ref ), fundamental load impedance, where the X-parameters are determined, this allows for the extraction of an accurate 'local' model for circuit design.…”

Section: Hbt X-parameters Model Formulationmentioning

confidence: 99%

“…This model uses the concept of harmonic superposition to analytically describe the large-signal B waves response of a non-linear system, linearised around a large-signal operating point, as functions of a linear mapping of the stimulus A waves (A qn ), in a similar manner as s-parameters. The basic load-independent (or fixed-load) model has the following mathematical formulation [13] …”

Section: Hbt X-parameters Model Formulationmentioning

confidence: 99%

See 1 more Smart Citation

Design of injection‐locked oscillator circuits using an HBT X‐parameters™‐based model

Rodriguez-Testera¹,

Pelaez-Perez

Fernandez-Barciela³

et al. 2015

IET Microwaves, Antennas & Propagation

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A load independent X-parameters-based heterojunction bipolar transistor (HBT) model has been used for the first time in the design and behaviour prediction of injection-locked oscillator circuits. This model has been extracted from load-pull measurements with a large-signal network analyser and, in order to obtain a high oscillator RF power, targeting a load impedance close to the optimum one for HBT maximum output power. A methodology is given to obtain robust injection-locked oscillator circuits with a highsynchronisation bandwidth. Several injection-locked oscillator prototypes have been designed and fabricated, and their measurements compared with the simulations obtained using the X-parameters model. Satisfactory results were obtained when the prototypes were operated as free-running and synchronised oscillators.

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Section: Hbt X-parameters Model Formulationmentioning

confidence: 99%

Section: Hbt X-parameters Model Formulationmentioning

confidence: 99%

Design of injection‐locked oscillator circuits using an HBT X‐parameters™‐based model

Rodriguez-Testera¹,

Pelaez-Perez

Fernandez-Barciela³

et al. 2015

IET Microwaves, Antennas & Propagation

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show abstract

“…In the frequency domain, the scattered m th harmonic component at port p is expressed by (1) at static RF conditions at controlled DC bias conditions [3][4] [6]. The model is characterized over a large set of drain voltages and a wide range of RF powers of the input driving signal.…”

Section: Bias Dependent Xp Modelmentioning

confidence: 99%

“…This has been demonstrated to be accurate for power amplifier applications where perturbations are relatively small compared to the large driving signal [6]. Extraction tones were applied in the measurements for the identification of those terms.…”

Section: Bias Dependent Xp Modelmentioning

confidence: 99%

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Simulation and measurement-based X-parameter models for power amplifiers with envelope tracking

Jang

Zai

Reveyrand

et al. 2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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-Static X-parameter (XP) models for RF power amplifiers (PAs), derived from both simulations and nonlinear vector network analyzer (NVNA) measurements, are investigated for the prediction of PA performance under dynamic signal conditions such as in envelope tracking (ET). The instantaneous AM-AM, AM-PM and PAE predictions of XP models extracted from simulation are compared under ET dynamic signal conditions to two types of circuit models using envelope simulation. An XP PA model is extracted for a peak 8W GaN class-F -1 ET PA from NVNA measurements with automated bias control. By applying a constant gain shaping table derived from the XP model to the drain supply voltage, the average PAE is improved from 40% to 57% for 3.84 MHz WCDMA signals at 2.14 GHz compared to fixed drain bias operation.

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Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Crupi

et al. 2022

Int J Numerical Modelling

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The design of a continuous broadband Doherty power amplifier (DPA) based on an X-parameter model is presented in this work. The broadband load-pull X-parameter model is extracted at both the package plane and current generate plane of the device under test. The model cannot only predict the fundamental and harmonic nonlinear behavioral accurately, but also find the optimal output power and drain efficiency (DE) region of the Smith chart precisely, thereby assisting DPA design. A 10-W gallium nitride packaged transistor from Wolfspeed is utilized in this design. The fabricated DPA reached a saturation output power of 44.3 dBm, with a saturation DE over 68% and a 6 dB output power back-off efficiency over 51% in the frequency range of 1.1-1.8 GHz, verifying experimentally the effectiveness of the proposed design methodology. K E Y W O R D Scontinuous broadband power amplifier, Doherty power amplifier, gallium nitride, loadpull, RF power transistor, X-parameter model

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GaN Device Modeling with X-Parameters

Cited by 56 publications

References 7 publications

Design of injection‐locked oscillator circuits using an HBT X‐parameters™‐based model

Design of injection‐locked oscillator circuits using an HBT X‐parameters™‐based model

Simulation and measurement-based X-parameter models for power amplifiers with envelope tracking

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

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