GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C

Luo, Shisong; Chang, Cheng; Xie, Qingyun; Li, Tao; Xu, Mingfei; He, Ziyi; Palacios, Tomás; Zhao, Yuji

doi:10.1109/drc61706.2024.10605554

2024 Device Research Conference (DRC) 2024

DOI: 10.1109/drc61706.2024.10605554

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GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C

Shisong Luo,

Cheng Chang,

Qingyun Xie

et al.

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GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C

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