GaN films deposited on glass substrate by middle-frequency magnetron sputtering

Zou, Changwei; Yin, M.L.; Li, M.; Liu, C.S.; Guo, Liping; Fu, Dejun

doi:10.1016/j.tsf.2008.07.038

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…The sputter grown GaN thin films are preferred because of the ease of operation, thickness control, low temperature deposition, sequential deposition of different films, and less toxicity [9]. Although sputtering of GaN has not yet been fully explored, sputtering of GaN has achieved polycrystalline and single crystal GaN by sputtering of a GaN target [10] [11] [12] [13] [14], a gallium (Ga) target [15] [16] [17], and GaN powder target [18] [19] [20].…”

Section: Methodsmentioning

confidence: 99%

Characteristics of GaN Thin Films Using Magnetron Sputtering System

Huq¹,

Garza²,

Garcia-Perez³

2016

JMP

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The paper presents a polycrystalline GaN thin film with a hexagonal wurtzite structure under the optimized sputtering conditions of 40 W RF power, 5 mT working pressure, using pure nitrogen gas with a substrate temperature of 700˚C. The study examines the effects of surface disorders and incorporates it in the thin films characteristics. A radio frequency (RF) Ultra High Vacuum (UHV) Magnetron Sputtering System has been used for the deposition of Gallium Nitride (GaN) on silicon, sapphire and glass substrates with different parameters. The power is varied from 40 W to 50 W, and the pressure from 4 mT to 15 mT. The effects of the RF sputtering powers and gas pressures on the structural properties are investigated experimentally. Sputtering at a lower RF power of 15 W does increase the N atomic percentage, however the deposition rate is substantially slower and the films are amorphous. GaN deposited on both silicon and sapphire wafer resulted in thin films close to stoichiometric once the N 2 concentration is 60% or higher. It is also observed that the substrate cooling/heating effects improve the quality of the thin films with fewer defects present at the surface of the GaN epi-structure.

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Section: Methodsmentioning

confidence: 99%

Characteristics of GaN Thin Films Using Magnetron Sputtering System

Huq¹,

Garza²,

Garcia-Perez³

2016

JMP

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show abstract

“…The advantages of using magnetron sputtering to deposit GaN thin films on glass substrates include large-scale fabrication with uniform thin-film thickness at a high deposition rate and a low deposition temperature. Moreover, GaN thin-film growth by magnetron sputtering can be achieved without using toxic metalorganic precursors and with reduced harmful byproducts [11,12].…”

Section: Introductionmentioning

confidence: 99%

Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate

et al. 2020

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In this study, n-type gallium nitride (GaN) films were fabricated by a silicon–titanium (Si-Ti) codoping sputtering technique with a zinc oxide (ZnO) buffer layer on amorphous glass substrates with different post-growth annealing temperatures for optimizing the GaN crystal quality. Si-Ti-codoped n-type GaN films that were thermally annealed at 400 °C had a low thin-film resistivity of 2.6 × 10−1 Ω-cm and a high electron concentration of 6.65 × 1019 cm−3, as determined through Hall measurement. X-ray diffraction (XRD) results revealed a high (002) XRD intensity with a narrow spectral line and a full width at half maximum (FWHM) value that indicated the superior crystal growth of a hexagonal structure of the GaN thin films. In addition, photoluminescence measurement results demonstrated a near-band-edge emission at 365 nm, indicating the crystal growth of GaN thin films on glass substrates. The Burstein–Moss effect was observed in the Tauc plot results, indicating that the Fermi level inside the conduction band moves upward and thus improves the n-type properties of the GaN thin film. X-ray photoelectron spectroscopy measurement results revealed that all atoms doped into the GaN film are present and that both Si and Ti atoms bond with N atoms.

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“…Therefore, developing a low-temperature deposition technology for growing GaN films on glass substrates is essential. According to the literature, GaN films can be deposited using magnetron sputtering on glass substrates, and this process involves the following advantages: Increased thin film deposition rate, large-area and low-temperature deposition, and reduced harmful byproducts during GaN film fabrication [9,10].…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

2019

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We deposited 300-nm-thick GaN films on an amorphous glass substrate at a substrate temperature of 300 °C by using pulsed direct current (DC) sputtering. A ZnO buffer layer was utilized to improve the crystalline quality of the GaN films. Scanning electron microscopy results showed that the GaN thin films were grown along the c-axis and possessed a columnar structure. Atomic force microscopy results revealed that the GaN film deposited at a sputtering power of 75 W had the maximum grain size (24.1 nm). Room-temperature photoluminescence measurement of the GaN films indicated an ultraviolet near-band-edge emission at 365 nm and a Zn impurity energy transition level at 430 nm. In addition, X-ray diffraction conducted on the GaN films revealed a predominant (002) hexagonal wurtzite structure. The GaN film deposited at the sputtering power of 75 W demonstrated a high optical transmittance level of 88.5% in the wavelength range of 400–1100 nm. The material characteristics of the GaN films and ZnO buffer layer were studied using cross-sectional high-resolution transmission electron microscopy. The deposition of GaN films by using pulsed DC magnetron sputtering can result in high material quality and has high potential for realizing GaN-related optoelectronic devices on glass substrates.

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GaN films deposited on glass substrate by middle-frequency magnetron sputtering

Cited by 8 publications

References 23 publications

Characteristics of GaN Thin Films Using Magnetron Sputtering System

Characteristics of GaN Thin Films Using Magnetron Sputtering System

Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

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