GaN Growth by Compound Source MBE Using GaN Powder

Honda, Toshio; Sato, Kei; Hashimoto, T.; Shinohara, M.; Kawanishi, Hideo

doi:10.1002/1521-396x(200112)188:2<587::aid-pssa587>3.0.co;2-o

Cited by 11 publications

(5 citation statements)

References 10 publications

(12 reference statements)

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“…6 No additional nitrogen source such as ammonia was introduced. 6 No additional nitrogen source such as ammonia was introduced.…”

Section: Methodsmentioning

confidence: 99%

“…6 The N/Ga atomic concentration ratio estimated using AES spectra indicates that the layers were Ga rich. The buffer layer was amorphous GaN deposited at RT.…”

Section: Methodsmentioning

confidence: 99%

“…It is important to consider the difference in thermal coefficients between III-V nitrides and the substrate. 6 The amorphous GaN (a-GaN) films have already been deposited at substrate temperatures of less than 500°C and a-GaN-based electroluminescent devices operating in ultraviolet and blue spectral regions have been demonstrated. 3 One of the effective ways of reducing the amount of cracks or residual strain is the reduction of the growth temperatures of III-V nitrides.…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

Honda¹,

Hama²,

Aoki³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inIn-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si (111) substrates using ammonia molecular beam epitaxy AIP Advances 5, 067108 (2015); 10.1063/1.4922193 Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecularbeam epitaxy J. Appl. Phys. 97, 013524 (2005); 10.1063/1.1826219 Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001) Appl. Phys. Lett. 75, 944 (1999);The low-temperature growth of GaN is required to prevent cracks due to thermal expansion. The lower limit of the temperature of the GaN growth by compound source molecular beam epitaxy ͑CS-MBE͒ was estimated using the results of reflection high-energy electron diffraction and atomic force microscopy. The lower limit of the temperature of GaN growth by CS-MBE was investigated and found to be below 450°C. The lower limit is due to the migration of atoms at the surface and the re-evaporation of excess Ga atoms.

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“…6 No additional nitrogen source such as ammonia was introduced. 6 No additional nitrogen source such as ammonia was introduced.…”

Section: Methodsmentioning

confidence: 99%

“…6 The N/Ga atomic concentration ratio estimated using AES spectra indicates that the layers were Ga rich. The buffer layer was amorphous GaN deposited at RT.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

Honda¹,

Hama²,

Aoki³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Among the synthetic approaches used, results obtained from bulk powder syntheses of oxygen-free [6 -11] or low-oxygen [12 -17] GaN/GaN-based powders have contributed to a better understanding of the properties while offering new, exciting and affordable applications. Potential application areas include, but are not limited to photonic crystals [18] and quantum dots in optoelectronics [5,19], powder sublimation sources for growth of GaN layers [20], spintronic materials [13,21] and, upon compacting/sintering alternative wafer supports for growing light-emitting heterostructures [6].…”

Section: Introductionmentioning

confidence: 99%

Tuning aerosol‐assisted vapor phase processing towards low oxygen GaN powders

Janik

Drygaś

Stelmakh

et al. 2006

Physica Status Solidi (a)

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Herein, are reported studies of various experimental conditions aimed at optimizing the Aerosol-Assisted Vapor Phase Synthesis (AAVS) of GaN powders. In general, the process utilizes affordable oxygenbearing gallium precursors in aqueous/methanol solutions to initially prepare nano-sized GaN x O y powders of spheroidal morphology. Subsequent pyrolysis of the GaN x O y intermediate in a NH 3 atmosphere converts the powders to sub-micron, crystalline GaN powders that usually contain some residual oxygen. The application of appropriate solvents, e.g., methanol, in the aerosol powder generation stage and the use of pyrolysis temperatures in the range 900 -1000 °C may improve both the extent of nitridation and, to certain degree, the control over average particle sizes. The characteristics of the AAVS-produced materials are compared with those for bulk GaN powders obtained by direct nitridation of commercial gallium oxide.

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“…1,2) Producing low-cost GaN-based light-emitting devices on a large scale requires low-temperature fabrication processes. 3) If compound-source molecular beam epitaxy (CS-MBE) is used, a low substrate temperature is expected for the deposition of GaN films, because the deposition temperature is lower with CS-MBE than that with conventional MBE. 4) The epitaxial growth of ZnSebased materials by CS-MBE at low temperatures has previously been reported.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy

Obinata¹,

Sugimoto²,

Ijima³

et al. 2005

Jpn. J. Appl. Phys.

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Amorphous GaN (a-GaN) films were deposited at a low temperature below 500°C by compound-source molecular beam epitaxy (CS-MBE). The relationship between excess Ga and its oxidation in the deposited GaN films is reported. X-ray photoelectron spectroscopy (XPS) revealed that the excess Ga in deposited films was oxidized in the air and converted to gallium oxide. By increasing the substrate temperature, the total amount of gallium oxide in the deposited films decreased due to the reduction of the excess Ga. Cathodoluminescence (CL) intensity from the UV to the blue spectral regions increased with as the amount of gallium oxide in the deposited films decreased.

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GaN Growth by Compound Source MBE Using GaN Powder

Cited by 11 publications

References 10 publications

Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

Tuning aerosol‐assisted vapor phase processing towards low oxygen GaN powders

Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy

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