GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

Abstract

Cubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al 2 O 3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RP-MOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.