GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Grinys, Tomas; Dargis, Rytis; Kalpakovaite, Agne; Stanionytė, Sandra; Clark, Andrew; Arkun, F. Erdem; Reklaitis, I.; Tomašiūnas, R.

doi:10.1016/j.jcrysgro.2015.03.032

Cited by 7 publications

(3 citation statements)

References 10 publications

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“… 14 reported the nanoporous material for the photonics through the evaporation-induced self-assembly process and oblique or glancing angle deposition. GaN epitaxial layers were grown on the Si substrate with the embedded Y 2 O 3 /Si 15 , Gd 2 O 3 /Si 16 , AlN/GaN 17 , and AlN/AlGaN 18 DBR structures. Berger et al .…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Fan

Syu

et al. 2017

Sci Rep

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A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.

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Section: Introductionmentioning

confidence: 99%

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Fan

Syu

et al. 2017

Sci Rep

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“…Among diverse dielectric materials, high-κ (κ: dielectric constant) metal-oxide dielectrics have been widely investigated for tuning the photoluminescence (PL) and electrical transport properties of various TMDC MLs. − Dielectric materials offer a potential low-loss alternative to plasmonic metamaterials at optical frequencies, which can aid to the fabrication of TMDC-based superior resonant reflectors. , Among various metal oxide dielectrics, rare earth oxides (REOs) with high refractive indices (1.75–1.95) represent a class of multifunctional materials with significant potential for their applications in photonic and optoelectronic devices . Our previous report demonstrated modulation of PL characteristics of MoSe 2 MLs by epitaxial Gd 2 O 3 thin films …”

Section: Introductionmentioning

confidence: 99%

Interference-Modulated Excitonic Reflectance of Monolayer MoSe₂ on Epitaxial Gd₂O₃ Thin Films

Ghosh,

Fissel,

Osten

et al. 2024

ACS Appl. Opt. Mater.

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We report on the excitonic resonance reflectance characteristics of MoSe 2 monolayers (MLs) exfoliated on epitaxial Gd 2 O 3 (111)/Si(111) thin films. We demonstrate that the reflectance of MoSe 2 MLs can be modulated by varying the thickness of the epitaxial Gd 2 O 3 layer. Upon increasing the Gd 2 O 3 layer thickness from 6 to 50 nm, the resonance reflectance modulation increases by 3-fold and the line-shape changes from Lorentzian to asymmetric Fano-like resonance. We demonstrate that the observed phenomena are a direct consequence of multiple reflections of light within the dielectric layer that interferes with the excitonic Lorentzian oscillator.

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“…15,16 But the low mechanical strength and the tiny highly reective area of the air-gap/GaN DBR structure remain a challenge for the photonic device fabrication. Y 2 O 3 /Si, 17 Gd 2 O 3 /Si, 18 AlN/GaN, 19 and AlN/AlGaN 20 DBR structures had been reported for GaN-based optoelectronic devices. Embedded dielectric distributed Bragg reectors, 21,22 Ti 3 O 5 /Al 2 O 3 DBRs, 23 and ITO/dielectric DBRs 24 had been reported to enhance the light extraction process in LED structures.…”

Section: Introductionmentioning

confidence: 99%