GaN HEMT Based Doherty Power Amplifier with Network Matching Optimization Technique for 2.4GHz

Chowdhary, Chetan C; Sreelakshmi, K

doi:10.1109/rteict42901.2018.9012453

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…This power divider equally splits the input power (port 1) into two equal-phase output signals (port 2 and port 3), maintaining matched states and offering isolation between the output ports. The formulas below demonstrate how to calculate the Wilkinson power divider parameters [27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]:…”

Section: Design Of Wilkinson Power Dividermentioning

confidence: 99%

“…The stability of a DPA is influenced by several factors, including impedance matching, load and source impedance, bias settings, and the characteristics of the power combiner. To function effectively as an RF power amplifier instead of an oscillator, a DPA must possess a stability factor (K) greater than 1 [30]. One commonly used method for assessing unconditional stability, where K > 1, is Rollet's condition, which relies on the value of K. However, while the K-∆ test provides a mathematical evaluation of unconditional stability, it does not enable straightforward comparisons between different devices due to its reliance on two separate parameters.…”

Section: Stability Analysismentioning

confidence: 99%

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Highly Efficient GaN Doherty Power Amplifier for N78 Sub-6 GHz Band 5G Applications

Eid,

Abouelnaga,

Ibrahim

et al. 2023

Electronics

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In this paper, a high-efficiency GaN Doherty power amplifier (DPA) for 5G applications in the N78 sub-6 GHz band is introduced. The theoretical analysis of the matching networks for the peak and carrier transistors is presented, with a focus on the impact of unequal power splitting for both transistors and the recommendation of a post-harmonic suppression network. The proposed design features an unequal Wilkinson power divider at the input and a post-harmonic suppression network at the output, both of which are crucial for achieving high efficiency. The Doherty power amplifier comprises two GaN 10 W HEMTs, measured across the 3.3 GHz to 3.8 GHz band (the N78 band), and the results reveal significant improvements in gain, output power, drain efficiency, and power-added efficiency. Specifically, the proposed design achieved a power gain of over 12 dB and 42 dBm saturated output power. It also achieved a drain efficiency of 80% at saturation and a power-added efficiency of 75.2%. Furthermore, the proposed harmonic suppression network effectively attenuated the harmonics at the output of the amplifier from the second to the fourth order to more than −50 dB, thus enhancing the device’s linearity.

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