2005
DOI: 10.1063/1.1861122
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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Abstract: We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor ͑MOS-HEMT͒ using atomic-layer-deposited ͑ALD͒ Al 2 O 3 as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor ͑HEMT͒ of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD Al 2 O 3 /AlGaN interface is of high quality and the ALD Al 2 O 3 /AlGaN/GaN MOS-HEMT is of high potential … Show more

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Cited by 469 publications
(288 citation statements)
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“…15,18 Although the standard high frequency capacitancevoltage ͑C-V͒ measurement at room temperature ͑RT͒ is usually done on metal/insulator/semiconductor heterostructure ͑MISH͒ capacitors and/or metal/semiconductor heterostructure ͑MSH͒ Schottky diodes before the fabrication and characterization of the MISHFET devices, the C-V data are often used only to estimate the thicknesses of the insulator film and/or the AlGaN layer 1,4,12,16,19 or to calculate the 2DEG density. 1,20 Although some authors have claimed that the slope of the MISH C-V curve can be used as a measure of the electronic quality of the insulator/AlGaN interface, 4,11,13 this claim should be considered very carefully because the C-V slope in a metal/AlGaN/GaN structure depends on the quality of the AlGaN/GaN interface and other factors, 21 and there is no well known and tested procedure for the analysis of C-V curves from a metal/insulator/AlGaN/GaN structure to extract the state density at the insulator/AlGaN and AlGaN/GaN interfaces. Some other authors have stated that the shifts of the C-V curve and of the threshold voltage ͑V th ͒ with respect to theoretical values are related to the charge in the insulator and at the insulator/AlGaN interface.…”
Section: Introductionmentioning
confidence: 99%
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“…15,18 Although the standard high frequency capacitancevoltage ͑C-V͒ measurement at room temperature ͑RT͒ is usually done on metal/insulator/semiconductor heterostructure ͑MISH͒ capacitors and/or metal/semiconductor heterostructure ͑MSH͒ Schottky diodes before the fabrication and characterization of the MISHFET devices, the C-V data are often used only to estimate the thicknesses of the insulator film and/or the AlGaN layer 1,4,12,16,19 or to calculate the 2DEG density. 1,20 Although some authors have claimed that the slope of the MISH C-V curve can be used as a measure of the electronic quality of the insulator/AlGaN interface, 4,11,13 this claim should be considered very carefully because the C-V slope in a metal/AlGaN/GaN structure depends on the quality of the AlGaN/GaN interface and other factors, 21 and there is no well known and tested procedure for the analysis of C-V curves from a metal/insulator/AlGaN/GaN structure to extract the state density at the insulator/AlGaN and AlGaN/GaN interfaces. Some other authors have stated that the shifts of the C-V curve and of the threshold voltage ͑V th ͒ with respect to theoretical values are related to the charge in the insulator and at the insulator/AlGaN interface.…”
Section: Introductionmentioning
confidence: 99%
“…While keeping the merits of conventional Schottky-gate-based HFETs, i.e., a high density of two-dimensional electron gas ͑2DEG͒ at the AlGaN/GaN interface, high cutoff and maximum frequencies, and the thermal and chemical stability of AlGaN and GaN, MISHFETs offer many advantages over HFETs, such as lower gate leakage current, higher breakdown voltage, better thermal stability of the gate, mitigation of current collapse, a wider range of gate voltage sweep, and higher maximum drain current and output power. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] These features are crucial for applications in high-power, high-temperature electronics, 7,17 particularly to realize low on-resistance and normally off highpower FETs. 15,18 Although the standard high frequency capacitancevoltage ͑C-V͒ measurement at room temperature ͑RT͒ is usually done on metal/insulator/semiconductor heterostructure ͑MISH͒ capacitors and/or metal/semiconductor heterostructure ͑MSH͒ Schottky diodes before the fabrication and characterization of the MISHFET devices, the C-V data are often used only to estimate the thicknesses of the insulator film and/or the AlGaN layer 1,4,12,16,19 or to calculate the 2DEG density.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9][10] For this study, Al 2 O 3 was chosen because it has a large conduction band offset with respect to GaN as well as a high permittivity (8)(9)(10) which allows for support of greater electric fields. 9,11 Unfortunately, deposition of Al 2 O 3 on air exposed GaN(0001) does not readily form a low-defect interface. 11,12 Cleaning and preparation a) Author to whom correspondence should be addressed.…”
Section: Introductionmentioning
confidence: 99%
“…[14][15][16][17][18][19][20] Precise control of this dielectric's thickness is necessary to maintain the aspect ratio between the gate length and the oxide thickness for good high frequency performance. Atomic layer deposition (ALD) offers excellent thickness control for the deposition of such dielectrics, 21 but the initial condition of the substrate surface is crucial for the nucleation of the oxide layer and the subsequent surface morphology and interface electrical properties.…”
mentioning
confidence: 99%