GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation

Abstract

Nano air channel transistors (NACTs) provide numerous advantages over traditional silicon devices, including faster switching speeds, higher operating frequencies, and enhanced radiation hardness attributable to the ballistic transport of electrons. In the development of field‐emission‐based integrated circuits, low‐power consumption rectifying nano air channel diodes (NACDs) play a crucial role. However, achieving rectification characteristics in NACDs is challenging due to their structural and material symmetry. This paper proposes a vertical GaN NACD with a consistent nano air channel fabricated using IC‐compatible processes. The GaN NACD exhibits an exceptionally low turn‐on voltage of 0.3 V while delivering a high output current of 5.02 mA at 3 V. Notably, it demonstrates a high rectification ratio of up to 2.2 × 105, attributing to significant work function disparities within the GaN‐Au structure, coupled with the reduction of Au surface roughness to minimize reverse current. Furthermore, the junction‐free structure and superior material properties of GaN enable the NACD to be suitable for use in radiation‐rich environments. With its potential as a fundamental component of ultrafast and ultrahigh‐frequency integrated circuits, this intriguing and cost‐effective rectifying diode is anticipated to garner widespread interest within the electronics community.