GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers

Aggar, L.; Bradai, Djamel; Bourezg, Yousf Islem; Abdesselam, M.; Chami, A.C.; Mocuta, Cristian; Thiaudière, Dominique; Speisser, C.; Müller, D.; Bouillet, Corinne; Normand, F. Le

doi:10.1016/j.nimb.2020.10.012

Nuclear Instruments and Methods in Physics Research Section B:

2020

DOI: 10.1016/j.nimb.2020.10.012

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GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers

L. Aggar

Djamel Bradai

Yousf Islem Bourezg

et al.

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GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers

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References 55 publications

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