GaN nanopillars with a nickel nano-island mask

Abstract

Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 10 8 cm 2 were demonstrated and controlled by the thickness of Ni film and the NH 3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.

Non-equilibrium magnetic properties of a mixed spin (1/2, 1) Ising graphene nanoisland

“…From both fundamental theoretical and experimental viewpoints, the combinations of novel and traditional properties and nano-structure applications make the study of nanoislands an important issue. Experimentally, many nanoislands such as Co island on Cu(111), 20 La 0.7 Sr 0.3 MnO 3 nanoislands, 21 Au nanoislands, 22 FeRh nanoislands, 23 Ni nanoislands, 24 Na nanoislands on the Cu(111) surface, 25 graphene nanoislands grown on the Co(0001) surface, 26 and FePdCu nanoislands 27 have been fabricated and their remarkable magnetic properties have been documented in the literature.…”