GaN Nanowires Grown by Molecular Beam Epitaxy

Bertness, Kristine A.; Sanford, Norman A.; Davydov, Albert V.

doi:10.1109/jstqe.2010.2082504

Cited by 114 publications

(106 citation statements)

References 102 publications

Supporting

Mentioning

100

Contrasting

Order By: Relevance

“…GaN and In(Ga)N nanowires can be epitaxially grown catalyst free on silicon substrates with aerial density in the range of 10 8 -10 11 cm À 2 and lengths up to a few micrometres [23][24][25][26][27][28][29][30][31][32] . The nanowires grow vertically in the wurtzite crystalline form and optical emission from them in the spectral range of 366-700 nm has been recorded by varying the In composition.…”

mentioning

confidence: 99%

“…The nanowires grow vertically in the wurtzite crystalline form and optical emission from them in the spectral range of 366-700 nm has been recorded by varying the In composition. Extensive structural characterization indicates that the nanowires are relatively free of extended defects 23,24,[27][28][29][31][32][33][34] . They can be doped p-and n-type with suitable dopant species up to levels similar to those achieved in planar structures.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

et al. 2013

View full text Add to dashboard Cite

In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that shortwavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In 0.25 Ga 0.75 N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of B70%.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

et al. 2013

View full text Add to dashboard Cite

show abstract

“…These growth techniques include metal-catalyzed metal-organic chemical vapor deposition (MOCVD) by the vapor-liquid-solid (VLS) mechanism, spontaneous formation in molecular beam epitaxy (MBE), and selective area growth by both MBE and MOCVD [1][2][3][4][5][6][7][8][9][10][11]. Even when using the same type of growth process, the resulting nanostructures can vary greatly in terms of geometry, morphology, crystallographic direction and defect content, leading to widely varying optical and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Even when using the same type of growth process, the resulting nanostructures can vary greatly in terms of geometry, morphology, crystallographic direction and defect content, leading to widely varying optical and electrical properties. These are determined by the specific details in the synthesis, such as the type, size and uniformity of the metal catalyst (if used), substrate type and orientation, precursor and carrier gases, and growth conditions (temperature, pressure, V/III ratio) [11][12][13]. Specifically, GaN nanowires have been reported by Ni catalyzed MOCVD to have a-axis or m-axis orientation grown on r-plane sapphire substrate with triangular crosssections [5,8,[14][15][16].…”

Section: Introductionmentioning

confidence: 99%

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Lin

Leung

Figiel

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

a b s t r a c tAmmonia-based molecular beam epitaxy (NH 3 -MBE) was used to grow catalyst-assisted GaN nanowires on ð1102Þ r-plane sapphire substrates. Dislocation free ½1120 oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar f1010g side facets, which appear due to a decrease in relative growth rate of the f1010g facets to the f1011g and f1011g facets under the growth regime in NH 3 -MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH 3 -MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

show abstract

“…Nanowirebased monochromic-coherent light sources may enable a number of groundbreaking applications, such as compact high resolution biochemical imaging and spectroscopy [5]. For III-nitride (GaN-based) nanowires, advances in synthesis techniques [6][7][8][9][10] have given rise to high material quality and controlled nanowire geometries needed for lasing [11]. Moreover, increasing efforts have been dedicated recently to manipulating the fundamental lasing properties of these nanowire lasers to make them more suitable for practical applications.…”

Section: Introductionmentioning

confidence: 99%

Polarization control in GaN nanowire lasers

Xu¹,

Hurtado²,

Wright³

et al. 2014

Opt. Express

View full text Add to dashboard Cite

Abstract:We demonstrate polarization control in optically-pumped single GaN nanowire lasers fabricated by a top-down method. By placing the GaN nanowires onto gold substrates, the naturally occurring randomly orientated elliptical polarization of nanowire lasers is converted to a linear polarization that is oriented parallel to the substrate surface. Confirmed by simulation results, this polarization control is attributed to a polarization-dependent loss induced by the gold substrate, which breaks the mode degeneracy of the nanowire and forms two orthogonally polarized modes with largely different cavity losses.

show abstract

GaN Nanowires Grown by Molecular Beam Epitaxy

Cited by 114 publications

References 102 publications

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Polarization control in GaN nanowire lasers

Contact Info

Product

Resources

About