2018
DOI: 10.1109/led.2017.2779445
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GaN-on-Si Quasi-Vertical Power MOSFETs

Abstract: Abstract-We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical vapor deposition (MOCVD). The devices consist of trench-gate quasi-vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 4 μm-thick drift layer, exhibiting enhancement-mode (E-mode) operation with a threshold voltage of 6.3 V and an on/off ratio of over 10 8 . A high off-state breakdown voltage of 645 V along with … Show more

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Cited by 90 publications
(86 citation statements)
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“…4 (a) shows the output characteristics of the fabricated vertical MOSFETs with metal mask, revealing a very high current density of 1.6 kA/cm 2 and a Ron,sp of 5 mΩcm 2 . These values were normalized by the device active area, defined by the gate trench area of 10 µm × 36 µm [23], [33], after accounting for a lateral current spreading of 2 µm from all the sides of the gate trench (which was confirmed by TCAD simulations). These devices exhibited 2.8x-better current density and 3x-lower Ron,sp as compared to quasi-vertical MOSFETs on a similar GaN epitaxial structure on Si substrate described in [23].…”
Section: Resultsmentioning
confidence: 99%
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“…4 (a) shows the output characteristics of the fabricated vertical MOSFETs with metal mask, revealing a very high current density of 1.6 kA/cm 2 and a Ron,sp of 5 mΩcm 2 . These values were normalized by the device active area, defined by the gate trench area of 10 µm × 36 µm [23], [33], after accounting for a lateral current spreading of 2 µm from all the sides of the gate trench (which was confirmed by TCAD simulations). These devices exhibited 2.8x-better current density and 3x-lower Ron,sp as compared to quasi-vertical MOSFETs on a similar GaN epitaxial structure on Si substrate described in [23].…”
Section: Resultsmentioning
confidence: 99%
“…These values were normalized by the device active area, defined by the gate trench area of 10 µm × 36 µm [23], [33], after accounting for a lateral current spreading of 2 µm from all the sides of the gate trench (which was confirmed by TCAD simulations). These devices exhibited 2.8x-better current density and 3x-lower Ron,sp as compared to quasi-vertical MOSFETs on a similar GaN epitaxial structure on Si substrate described in [23]. This improvement in electrical performance is mainly due to the fully-vertical design of the device [34] and the improved mobility in the p-GaN inversion channel.…”
Section: Resultsmentioning
confidence: 99%
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“…GaN-on-Si offers a cost-effective alternative for vertical GaN power devices, due to its large-scale availability, low cost, and a mature fabrication technology. Vertical GaN-on-Si P-i-N and Schottky diodes [10][11][12][13][14][15][16][17][18], and more recently, the first vertical transistor have been demonstrated on 6-inch Si substrates [19]. For practical use of the emerging vertical transistors in several topologies of power converters, such as buck/boost converters, voltage-source inverters, and resonant converters, an extra freewheeling diode is required to allow a reverse flow of current during off-state [20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…More details of the epitaxial structure and fabrication process used in this work can be found in Ref. [19].…”
Section: Introductionmentioning
confidence: 99%