GaN on Si-rich SiNx-coated sapphire at different growth stages: The surface morphologies and optical properties

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

“…113%) [5,7,[10][11][12][13]. Due to a large lattice mismatch, a high density of threading dislocations on the order of (10 9 -10 10 cm −2 ) exists in the GaN film on silicon substrates, which significantly affects the performance of the GaN based devices [8].…”

“…Due to a large lattice mismatch, a high density of threading dislocations on the order of (10 9 -10 10 cm −2 ) exists in the GaN film on silicon substrates, which significantly affects the performance of the GaN based devices [8]. In order to obtain crack-free highquality GaN film on Si substrate, various types of buffer layers and growth conditions as well as post-growth heat treatment processes have been proposed by different research groups [10][11][12][13][14][15][16][17]. However, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications.…”

“…However, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications. Therefore, the control of crack distribution for a large area film is the main issue of the present study [7][8][9][10][11].…”

InGaN/GaN quantum well improved byin situSiNxpretreatment of GaN template

“…The SiN x treatment may partially relax the compressive strain and enhance the Ga surfactant effect due to the increase of surface Ga coverage by Si incorporation at Ga substitutional sites . By formation of nanoscale dielectric SiN x masks using in situ SiN x treatment of sapphire substrates, nanoscale epitaxial lateral overgrowth (nELO) of high‐quality GaN films has been realized . The in situ nELO has merits of (i) free from ex situ lithography; (ii) faster and more uniform coalescence of neighboring nanoislands and possible reduction of strain and misorientation between these nanoislands.…”

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

“…This method has been verified as a convenient and efficient way to reduce TDs to 10 7 -10 8 cm −2 in GaN grown on sapphire substrates [6][7][8][9][10][11][12][13][14][15]. The method has been used to improve the performance of devices such as blue and green LEDs, UV-LEDs, Schottky barrier photo-detectors, and metal-semiconductor-metal photo-detectors [16][17][18][19][20] …”