GaN on Si Technologies for Power Switching Devices

Ishida, M.; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/ted.2013.2268577

Cited by 372 publications

(180 citation statements)

References 34 publications

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“…[1][2][3][4] Epitaxial AlGaN/GaN heterostructure forms two-dimensional electron gas (2DEG) at the interface due to the unique polarization properties of III-Nitride materials. 5,6 The spontaneous polarization and piezoelectric polarizations play an important role in the formation of 2DEG at the AlGaN/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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“…Typical applications are buck and boost converters in a PFC topology (1,2). Fast switching without sacrificing power losses allows shrinking the overall system by over a factor 4, reducing the total bill-of-materials (3).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Moens¹,

Banerjee²,

Constant³

et al. 2016

ECS Trans.

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“…GaN based high-electron-mobility transistors (HEMTs) are being actively developed for high power, high voltage switching applications [1,2]. By using a 2-D electron gas (2DEG) in GaN based heterojunctions and by benefiting from the high bandgap of GaN and its related alloys, low onresistance (RON) and high blocking voltages can be realized at the same time [3,4].…”

Section: Introductionmentioning

confidence: 99%