GaN optical degradation during high energy Sn5+ ion irradiation

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

“…III-nitrides may also be subjected to SHI irradiation when they are used for space applications. Then, the behavior of these compounds under irradiation, within a wide range of energy and projectile mass, is a real issue [34,35]. Moreover, due to the fact that III-nitrides have the same wurtzite crystallographic structure and present very different band gaps (and a continuous variation when using alloys), these semiconductors are from a basic science point of view a unique study case for a better understanding of the ion track formation processes.…”

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

“…22,23 Moreover, due to high resistance to radiation damage, they are expected to work at high temperatures and to resist harsh environments with exposure to irradiation, e.g., in space applications. 24 Although structural damage formation in GaN upon ion bombardment has been thoroughly examined during the last decades, 3,[24][25][26][27][28][29] the irradiation effects in InGaN remain barely investigated and understood, especially those caused by strongly ionizing radiation. Understanding the effects of SHI irradiation is important, e.g., for the potential application of InGaN-based devices in space technology.…”

“…Although structural damage formation in GaN upon ion bombardment has been thoroughly examined during the last decades, 3,24–29 the irradiation effects in InGaN remain barely investigated and understood, especially those caused by strongly ionizing radiation. Understanding the effects of SHI irradiation is important, e.g.…”

Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN

“…Due to their technological importance in space applications, more understanding is required about the influence of ion beam interactions. There are attempts to address such issues in GaN pertaining to charged particle bombardments such as high energy electrons [1][2][3][4], low energy electron irradiation [5] and heavy ion irradiation [6]. Many researchers have used ion irradiation to investigate GaN [7][8][9][10][11], not only to understand the ion-solid interaction mechanisms but also as a useful tool for tailoring the strain which in turn changes structural and electrical properties in a selective and controlled manner.…”