GaN pitch-variable grating fabricated on Si substrate

Sameshima, H.; Tanae, T.; Hu, Fangren; Hane, Kazuhiro

doi:10.1109/omems.2010.5672174

Cited by 4 publications

(2 citation statements)

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“…For a pitch-variable resonant grating, the possible tuning range is determined by micro-actuator parameters and applied voltage. In particular, the novel method is feasible to fabricate III-nitride gratings for the visible range [24], and the tunable resonant reflectors are very promising for surface emitting devices because III-nitride-based quantum wells are incorporated into these III-nitride gratings for active optical devices.…”

Section: Resultsmentioning

confidence: 99%

The resonant III-nitride grating reflector

Wang¹,

Wu²,

Tanae³

et al. 2011

J. Micromech. Microeng.

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We report here on the fabrication of a guided-mode resonant III-nitride grating reflector on a silicon substrate. In addition to compensating the residual stress of III-nitride layers, hafnium oxide (HfO2) film also serves as a hard mask during inductively coupled plasma reactive ion etching of III-nitride layers. The silicon substrate underneath the III-nitride gratings is etched and thus the III-nitride gratings are released and freely suspended with air as low refractive index materials on the top and bottom. The guided-mode resonances that are affected by the grating period, duty ratio, polarization and effective refractive index are experimentally characterized in the reflectance measurements. These works open the possibility of fabricating resonant III-nitride structures on the silicon substrate for further tunable III-nitride optical devices and integrated optics.

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Section: Resultsmentioning

confidence: 99%

The resonant III-nitride grating reflector

Wang¹,

Wu²,

Tanae³

et al. 2011

J. Micromech. Microeng.

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“…At present, nanopillars and nanoholes represent the fundamental building blocks for the majority of nanophotonic devices [1-3, 5, 8, 9]. By controlling the material, height, aspect ratio, and pitch of nanopillars and nanoholes, a wide range of nanodevices can be realized [10,11]. E-beam lithography and interference lithography are two of the primary methods currently employed to create nanofeatures on silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of large arrays of plasmonic nanostructures via double casting

Horsley

Skinner

2012

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V

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Large arrays of periodic nanostructures are widely used for plasmonic applications, including ultrasensitive particle sensing, optical nanoantennas, and optical computing; however, current fabrication processes (e.g., e-beam lithography and nanoimprint lithography) remain time consuming and expensive. Previously, researchers have utilized double casting methods to effectively fabricate large-scale arrays of microscale features. Despite significant progress, employing such techniques at the nanoscale has remained a challenge due to cracking and incomplete transfer of the nanofeatures. To overcome these issues, here we present a double casting methodology for fabricating large-scale arrays of nanostructures. We demonstrate this technique by creating large (0.5 cm x 1 cm) arrays of 150 nm nanoholes and 150 nm nanopillars from one silicon master template with nanopillars. To preclude cracking and incomplete transfer problems, a hard-PDMS/soft-PDMS (h-PDMS/s-PDMS) composite stamp was used to replicate the features from: (i) the silicon template, and (ii) the resulting PDMS template. Our double casting technique can be employed repeatedly to create positive and negative copies of the original silicon template as desired. By drastically reducing the cost, time, and labor associated with creating separate silicon templates for large arrays of different nanostructures, this methodology will enable rapid prototyping for diverse applications in nanotechnological fields.

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