GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Sun, Ruize; Lai, Jingxue; Chen, Wanjun; Zhang, Bo

doi:10.1109/access.2020.2967027

Cited by 144 publications

(58 citation statements)

References 98 publications

(105 reference statements)

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“…The other important issues such as GaN power integration, integrated over-current protection, frequencydependent on-resistance, EMI, and also transformer current ringing at higher turns ratios are explored by the various researchers in the literature. [99][100][101][102][103] The power density and efficiency are further improved with the new converter topologies. The converter design depends on the various aspects like power density, efficiency, device voltage stresses, and the switching frequency.…”

Section: Dc-dc Convertermentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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Section: Dc-dc Convertermentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

View full text Add to dashboard Cite

show abstract

“…A brief outline of the innovative package will be made in the following [46,52]. As it was stated in Section 1, these solutions are becoming increasingly used in industry, for Siand WBG-based power devices [43,[53][54][55][56][57][58]. The SiP solution, from STMicroelectronics, pre- The principal challenges currently present in the design and application of GaN-based power devices mainly rely on thermal management [24], parasitic contributions with high switching frequency (high dv/dt and di/dt slew rates coupled with parasitic elements) [25], reliability [26], and dynamic on-state resistance.…”

Section: Integrated Gan Package Descriptionmentioning

confidence: 99%

Integrated Electromagnetic-Thermal Approach to Simulate a GaN-Based Monolithic Half-Bridge for Automotive DC-DC Converter

et al. 2021

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New technological and packaging solutions are more and more being employed for power semiconductor switches in an automotive environment, especially the SiC- and GaN-based ones. In this framework, new front-end and back-end solutions have been developed, and many more are in the design stage. New and more integrated power devices are useful to guarantee the performances in electric vehicles, in terms of thermal management, size reduction, and low power losses. In this paper, a GaN-based system in package solution is simulated to assess the structure temperature submitted to a Joule heating power loss. The monolithic package solution involves a half-bridge topology, as well as a driver logic. A novel integrated electromagnetic and thermal method, based on finite element simulations, is proposed in this work. More specifically, dynamic electric power losses of the copper interconnections are computed in the first simulation stage, by an electromagnetic model. In the second stage, the obtained losses’ geometrical map is imported in the finite element thermal simulation, and it is considered as the input. Hence, the temperature distribution of the package’s copper traces is computed. The simulation model verifies the proper design of copper traces. The obtained temperature swing avoids any thermal-related reliability bottleneck.

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“…The obtained experimental results are then used to validate Technological improvements have been achieved in recent years to minimize parasitic inductances in GaN transistors packaging, leading to a drastic reduction in the component sizes [8,9]. The monolithic integration of the GaN power transistor and its gate driver, minimizing the gate loop inductance, contributes to modern challenges for highly efficient high-frequency power conversion [10,11]. For low power applications, previous works have shown the possibility of a monolithic integration of the full power stages [12,13].…”

Section: Introductionmentioning

confidence: 99%

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

et al. 2021

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Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

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GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Cited by 144 publications

References 98 publications

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Integrated Electromagnetic-Thermal Approach to Simulate a GaN-Based Monolithic Half-Bridge for Automotive DC-DC Converter

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

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