GaN Power Integration Technology and Its Future Prospects

Wei, Jin; Zheng, Zheyang; Tang, Gaofei; Xu, Han; Lyu, Gang; Zhang, Li; Chen, Junting; Hua, Mengyuan; Feng, Sirui; Chen, Tao; Chen, Kevin J.

doi:10.1109/ted.2023.3341053

Cited by 26 publications

(4 citation statements)

References 226 publications

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“…1 Included substrate, front-end of line, back-end of line; packaging not included, 2 Back-end of line not included, 3 Yield not included.…”

Section: Discussionmentioning

confidence: 99%

“…Thus, monolithic integration in GaN has a positive effect and can reduce the use of materials and resources as well as the relative climate impact for more sustainable power stages, which is why 48 V GaN power stages are increasingly being used in data centers and motor applications like drones. Si BCD/CMOS: 0.67-3.02 Si BCD/CMOS: 0.67-3.02 1 Included substrate, front-end of line, back-end of line; packaging not included, 2 Back-end of line not included, 3 Yield not included.…”

Section: Considerations On Life Cycle Assessmentmentioning

confidence: 99%

“…With the advent and ascent of gallium nitride (GaN) power transistors, these have been increasingly used in power stages to achieve primarily higher power density and efficiency [1,2]. In addition, the GaN technology with its lateral transistor structure (known as high electron mobility transistors, HEMTs) enables the monolithic integration of additional functions and circuits on a chip to realize cost-effective GaN power ICs [3][4][5][6] used in power converters with a reduced bill of material (BOM) and associated lower relative climate impact [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

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In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.

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“…1 Included substrate, front-end of line, back-end of line; packaging not included, 2 Back-end of line not included, 3 Yield not included.…”

Section: Discussionmentioning

confidence: 99%

Section: Considerations On Life Cycle Assessmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

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show abstract

“…GaN high electron mobility transistors (HEMTs) have been widely researched due to GaN's appealing material properties, such as wide band-gap (3.4 eV) and high electron velocity (3 × 10 7 cm s −1 ), which are highly promising for both high power and high frequency applications. 1 Significant advancements have been made in the development of GaN HEMTs across multiple technology generations, including 0.45 μm, 0.25 μm, and 0.15 μm gatenode technologies. These advancements target various frequency bands ranging from L-, S-, and C-bands 2,3 to Ku- 4,5 and Ka-bands, [6][7][8][9][10] supporting advanced applications such as radar, 6 G communications, and other MMICs.…”

mentioning

confidence: 99%

Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application

Zhang,

Lv,

Ding

et al. 2024

ECS J. Solid State Sci. Technol.

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In this paper, we have effectively demonstrated 150 nm-gate-length AlGaN/GaN high electron mobility transistors (HEMTs) on 4-inch SiC substrate. The 150 nm gate-length was accomplished by utilizing traditional I-line stepper photolithography, together with a nitride spacer side-wall. This method offers superior processing efficiency compared to E-beam lithography with high wafer uniformity. The devices processed with this spacer side-wall aided method demonstrated comparable electrical performances as that of E-beam processed one with fT of 45 GHz, fMAX of 80 GHz, Pout of 31 dBm and PAE of 45% at 29 GHz, which can be imported to large scale manufacturing.

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Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Zhang,

Liang,

Yang

et al. 2024

Advanced Materials

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High‐quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single device platform are in demand but remain challenging to fabricate. We report an AlGaN/GaN‐based double‐heterostructure, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization‐induced two‐dimensional electrons that can be modulated to control electron separation, collection, and storage process in the channel of the fabricated phototransistor. As a result, when exposed to different light sources, the device shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics owing to the successful programming of the 2DEGs by the combined gate and drain voltage inputs. A self‐powered mode with a responsivity over 100 A/W and a photoconductive mode with a responsivity of ∼108 A/W were achieved, with the ultimate demonstration of a 10×10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage capability. Demonstrating three‐in‐one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.This article is protected by copyright. All rights reserved

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GaN Power Integration Technology and Its Future Prospects

Cited by 26 publications

References 226 publications

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

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