GaN: Processing, defects, and devices

Pearton, S. J.; Zolper, J.C.; Shul, R. J.; Ren, F.

doi:10.1063/1.371145

Cited by 1,731 publications

(848 citation statements)

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“…21 The incorporation depths of 2 H are very large compared to those in GaN or GaAs under similar conditions, where depths of 1-2 m are observed. 22,23 Using a simple estimate of the diffusivity D, from D ϭX 2 /4t, and where X is taken to be the distance at which 2 H concentration has fallen to 5ϫ10 15 cm Ϫ3 in Fig. 1, we can estimate the activation energy for diffusion.…”

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confidence: 99%

“…This is in sharp contrast to 2 H in GaN, where much higher temperatures (у800°C) are needed to evolve the deuterium out of the sample. 22,23 To compare these data to the thermal stability of 2 H incorporated by direct implantation, 18 Fig. 3 shows the percentage of 2 H remaining ͑measured by SIMS͒ as a function of annealing temperature for incorporation by either plasma exposure or implantation.…”

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Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Overberg

Heo

et al. 2003

Applied Physics Letters

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204

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Hydrogen incorporation depths of >25 μm were obtained in bulk, single-crystal ZnO during exposure to H2 plasmas for 0.5 h at 300 °C, producing an estimated diffusivity of ∼8×10−10 cm2/V⋅s at this temperature. The activation energy for diffusion was 0.17±0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500–600 °C was sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of secondary ion mass spectrometry (<5×1015 cm−3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage in the former case.

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confidence: 99%

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confidence: 99%

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Overberg

Heo

et al. 2003

Applied Physics Letters

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204

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“…Some of them include [87][88][89][90][91] † The lack of native oxide in GaN restricts production of GaN MOS devices. However, SiC uses SiO 2 as a native oxide.…”

Section: Silicon Carbide Against Gallium Nitridementioning

confidence: 99%

Integrated motor drives: state of the art and future trends

2017

IET Electric Power Applications

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With increased need for high power density, high efficiency and high temperature capabilities in aerospace and automotive applications, integrated motor drives (IMD) offers a potential solution. However, close physical integration of the converter and the machine may also lead to an increase in components temperature. This requires careful mechanical, structural and thermal analysis; and design of the IMD system. This study reviews existing IMD technologies and their thermal effects on the IMD system. The effects of the power electronics position on the IMD system and its respective thermal management concepts are also investigated. The challenges faced in designing and manufacturing of an IMD along with the mechanical and structural impacts of close physical integration is also discussed and potential solutions are provided. Potential converter topologies for an IMD like the matrix converter, two-level bridge, three-level neutral point clamped and multiphase full bridge converters are also reviewed. Wide band gap devices like silicon carbide and gallium nitride and their packaging in power modules for IMDs are also discussed. Power modules components and packaging technologies are also presented. IntroductionOver the last two decades there has been a shift from traditional physically separated motor and drive systems to more compact, power dense, motor-drive combinations [1]. This new power-dense motor-drive structure combines both the motor and its associated control and drive circuitry within a single enclosure. The earliest records of commercially available motor-drive systems were manufactured by Grundfos in 1991 and Franz Morat KG in 1993 [2].These compact systems have been called a variety of names from 'smart motors' to 'integrated motors', the latter forming the foundation for the new moniker currently identified with these systems [3]. The term 'integrated motor drive (IMD)' is the latest associated with this class of products and is as a result of the success of a TB Woods Inc. manufactured motor-drive registered under the same name [3].IMDs are increasingly being developed and produced by machine manufacturers due to the significant potential benefits they offer. The most significant of these benefits include direct replacement of inefficient direct on line motors, increased power density, lower losses and lower costs compared with separate motor and drive solutions. Technological advancements over the last decade have led to the development of robust electronic components able to withstand the harsh environments required by some forms of integration [4]. By eliminating separate enclosures and long cable runs, the integrated approach promises to lower system costs by 20 to 40% [5].Elimination of transmission cables has economic advantages, including increased reliability due to the removal of the output filter commonly required for long cables. Removal of long cable runs and integration into a single package will also significantly reduce potential electromagnetic interference (EMI). This a...

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“…In situ GaN doping by molecular beam epitaxy has brought about important results: integration of Eu, Er, and Tm for full-color displays, laser action from Eu-doped GaN at room temperature (RT) [1,2]. Ion implantation is a competitive technique with many advantages, particularly the possibility to control the doped (125) area, an easier lateral integration, or the formation of highly resistive regions which are needed for fabrication of GaN based electronic devices such as high electron mobility transistors [3,4].…”

Section: Introductionmentioning

confidence: 99%

Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

et al. 2006

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Rare earth ions implanted GaN has been investigated by transmission electron microscopy versus the fluence, using Er, Eu or Tm ions at 150 keV or 300 keV and at room temperature. Point defect clusters and stacking faults are generated from low fluences (7 × 10 13 at/cm 2 ), their density increases with the fluence up to the formation of a highly disordered layer at the surface. This highly disordered layer is observed from a threshold fluence of 3×10 14 at/cm 2 at 150 keV and 3×10 15 at/cm 2 at 300 keV, and appears to be composed of voids and misoriented nanocrystallites. Its thickness rapidly increases with the fluence, and then saturates. Both basal and prismatic stacking faults were observed. Basal stacking faults are I 1 in majority, but E or I2 have also been identified. I1 basal stacking faults propagate easily through GaN by folding from basal to prismatic planes. Channelling implantation, increasing the implantation temperature from room temperature to 500 • C, or implanting through a 10 nm thick AlN cap reduce the crystallographic damage, particularly by retarding the formation of the highly disordered layer. Implanting through the AlN cap allows the highly disordered layer formation threshold fluence to be increased by one order of magnitude, as well as the annealing at high temperature (1300 • C) which brings about a strong optical activation of the rare earths.

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GaN: Processing, defects, and devices

Cited by 1,731 publications

References 499 publications

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Integrated motor drives: state of the art and future trends

Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

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