GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate

Abstract

Nanocolumn‐crystallized InGaN/GaN quantum well crystals were deposited on Si (111) substrate. Photoluminescence measurement demonstrated a wide emission wavelength from about 400 nm to 700 nm. We propose a new light source device combined with Micro‐Electro‐Mechanical Systems (MEMS). The proposed device is monolithically composed of the GaN light source structures and Si MEMS. The direction of the light beam emitted from an array of the light source can be changed by a MEMS beam steering mechanism. A micro‐stage with comb actuators was fabricated from the Si substrate. The InGaN/GaN quantum well film is patterned on the micro‐stage. Basic researches on the growth of GaN crystals on Si substrate were also carried out. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)