GaN surface electron field emission efficiency enhancement by low-energy photon illumination

Abstract

Articles you may be interested inElectron field emission enhanced by geometric and quantum effects from nanostructured AlGaN/GaN quantum wells Appl. Phys. Lett. 98, 152110 (2011); 10.1063/1.3581043Study of electric field enhanced emission rates of an electron trap in n -type GaN grown by hydride vapor phase epitaxy

Electron field emission from nanostructured semiconductors under photo illumination

“…In spite of the low energy barrier of the upper valley, its impact on the emission current can be remarkable after hot electron filling due to the Gunn (electron transfer) effect. The use of additional light illumination of such electron field emitters allows the electron transfer effect to be sustained and decreases the effective work function [7,[39][40][41]. Photoassisted field emitters are perspective as modulated electron emitters for application in vacuum micro-and nanoelectronics.…”

“…This method is based on the work function changing under photoexcitation of electrons or hot electrons at their tunneling through a barrier according to the FN mechanism. A (photoassisted) field emission spectroscopy method was developed for characterization of the conduction band structure of wide bandgap materials such as GaN, AlGaN, and ZnO [7,20,28,29,[38][39][40][47][48][49][50]. It is based on pure field emission or employs light emitting diodes (LEDs) or an optical laser for photoexcitation of electrons.…”