GaN UV photodetector by using transparency antimony-doped tin oxide electrode

Tu, Ming-Lung; Su, Yan–Kuin; Chang, Shoou-Jinn; Chuang, Ricky W.

doi:10.1016/j.jcrysgro.2006.10.190

Cited by 23 publications

(9 citation statements)

References 9 publications

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“…Owing to the large differences in their lattice constants and thermal expansion coefficients, a large number of TDs arise in the GaN films. (6,7) This can cause a significant degradation in the performance of GaN-based devices. (8,9) Therefore, further reducing the TD density is an important issue for fabricating high-performance UV LEDs or UV PDs.…”

Section: Introductionmentioning

confidence: 99%

High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate

Liu

Shoou-Jinn²,

2017

Sensors and Materials

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Keywords: GaN ultraviolet photodetector, metal-semiconductor-metal, periodic trapezoid column-shaped patterned sapphire substrate, responsivity, UV-to-visible rejection ratio A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

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Section: Introductionmentioning

confidence: 99%

High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate

Liu

Shoou-Jinn²,

2017

Sensors and Materials

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“…Nitride-based compounds are generally useful for optical devices such as light-emitting diodes (LEDs), laser diodes, and photodetectors (PDs) in blue and ultraviolet regions because of their wide direct band gap and high electrical conductivity [1][2][3]. However, the high density of threading dislocations (TDs) are inherent in the epitaxial GaN films on sapphire substrate due to the large difference in the lattice constant between the epitaxial layer and sapphire substrate [4,5]. This can incur a significant degradation in the performance of GaN-based devices [6,7].…”

Section: Introductionmentioning

confidence: 99%

High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

Liu

Chang

2016

Preprint

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GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

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“…Several types of ultraviolet (UV) sensors have been proposed to measure doses of UV irradiation with greater efficiency and easier methods. In many cases, UV sensors have been developed based on the principles of photoconductive effects using several kinds of wide-band-gap inorganic materials, such as GaN, AlN, SnO 2 , and ZnO compounds [ 1 , 2 , 3 , 4 , 5 ]. Nanocrystalline diamond thin film [ 6 ] has been additionally investigated as an effective UV-sensing material [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

Ranjkesh

Park

et al. 2015

Sensors

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We propose a highly oriented photochromic dye film for an ultraviolet (UV)-sensing layer, where spirooxazine (SO) derivatives are aligned with the liquid crystalline UV-curable reactive mesogens (RM) using a guest-host effect. For effective electrical UV sensing with a simple metal-insulator-metal structure, our results show that the UV-induced switchable dipole moment amount of the SO derivatives is high; however, their tilting orientation should be controlled. Compared to the dielectric layer with the nearly planar SO dye orientation, the photochromic dielectric layer with the moderately tilted dye orientation shows more than seven times higher the UV-induced capacitance variation.

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GaN UV photodetector by using transparency antimony-doped tin oxide electrode

Cited by 23 publications

References 9 publications

High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate

High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate

High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

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