GaP(001) and InP(001): Reflectance anisotropy and surface geometry

Esser, N.; Schmidt, Wolf Gero; Bernholc, J.; Frisch, A. M.; Vogt, Patrick; Zorn, M.; Pristovsek, Markus; Richter, Wolfgang; Bechstedt, F.; Hannappel, T.; Visbeck, S.

doi:10.1116/1.590810

Cited by 53 publications

(30 citation statements)

References 40 publications

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“…1) has been generally established [4,5]. For the much-studied case of GaAs, the extensive experimental and theoretical knowledge accumulated about the surface structure has led to significant progress in understanding the atomistic mechanisms of growth during molecular beam epitaxy (MBE) [6,7].…”

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confidence: 99%

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

et al. 2000

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We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally ͑1 3 3͒, we find that there are actually three distinct, stable ͑4 3 3͒ surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth. PACS numbers: 68.35.Bs, 61.16.Ch, 73.61.Ey, 81.15.Hi The surface reconstruction on a semiconducting material is the starting point for understanding the mechanisms of growth from the vapor. The steric and energetic landscape of the surface reconstruction determines the kinetic factors for adsorption, diffusion, and desorption, and provides the template for island nucleation [1]. These factors are critical to our understanding of growth and the formation of interfaces between materials, particularly for the case of III-V semiconductor quantum heterostructures, which are key components in a wide range of optical and high frequency electronic devices under development. Many of the most promising applications require extremely thin layers, so that even submonolayer variations in film thickness and interfacial roughness can dramatically affect the ultimate device performance [2,3]. To achieve the level of morphological control needed to reproducibly fabricate optimized III-V devices, a detailed understanding of the relevant surface reconstructions and the mechanisms by which epitaxy proceeds is essential.The structure of III-As and III-P (001) surfaces under typical device growth conditions (V͞III flux . 1) has been generally established [4,5]. For the much-studied case of GaAs, the extensive experimental and theoretical knowledge accumulated about the surface structure has led to significant progress in understanding the atomistic mechanisms of growth during molecular beam epitaxy (MBE) [6,7]. In contrast, the III-Sb device surfaces are poorly understood, despite their demonstrated potential for a variety of advanced electronic and optoelectronic applications [8]. Although the surface structures have been determined for atypical, extreme Sb-rich conditions-InSb and AlSb have the c͑4 3 4͒ structure common to the arsenides, and GaSb reconstructs into unusual, metallic ͑n 3 5͒ structures [9,10]-even after more than 20 years of study [11], the atomic-scale structures under more typical growth conditions have yet to be resolved. During device growth both GaSb and AlSb usually exhibit a ͑1 3 3͒-like reflection high-energy electron diffraction (RHEED) pattern, with the GaSb RHEED further delineated into distinct c͑2 3 6͒ and ͑1 3 3͒ (higher temperature/lower Sb flux) regimes [12,13]. Simple Sb-dimer row models for these reconstructions have been proposed [13,14], but scanning tunneling microscopy (STM) studies of the III-Sb(001) surfaces...

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Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

et al. 2000

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“…(4 Â 2) reconstructions with Ga or P dimers in the uppermost atomic layer are unstable. The comparison of measured and calculated reflectance anisotropy spectra support the mixed-dimer reconstruction of the Ga-rich GaP(001) surface [8,9]. This has recently been confirmed by a comparison of calculated and measured scanning-tunneling microscopy (STM) images [10].…”

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confidence: 49%

“…A slightly different behaviour is found for samples grown by metal-organic vapour phase epitaxy or chemical beam epitaxy as well as for GaP(001) surfaces prepared by thermal desorption of a protective arsenic/phosphorous double layer cap under ultrahigh vacuum conditions [7][8][9]. After annealing to 690 K the de-capped GaP(001) surfaces show a (2 Â 1)=(2 Â 2)-like LEED pattern.…”

Section: Introductionmentioning

confidence: 96%

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Structure and Energetics of P-rich GaP(001) Surfaces

Pulci

Schmidt

Bechstedt

2001

phys. stat. sol. (a)

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Subject classification: 68.35.Bs; 68.35.Md; S7.11 Dedicated to Professor Dr. Wolfgang Richter on the occasion of his 60th birthdayThe energetics and atomic structure of the P-rich GaP(001) surface are studied by first-principles total-energy calculations. For (2 Â 2) reconstructed surfaces we predict the formation of a P bilayer, which is semiconducting due the formation of inequivalent dimers.

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“…11 Applying in situ reflection anisotropy spectroscopy (RAS), we recently showed that the formation of the interface between GaP(100) and water depends highly on the atomic structure of the GaP surface prior to exposure. 12 RA spectra of P-rich and Ga-rich GaP(100) surfaces are well-understood both in theory 13,14 and experiment, [15][16][17] which enables precise in situ control during MOVPE preparation. Pseudomorphic GaP/Si(100) surfaces can be prepared analogously to GaP(100) regarding atomic order.…”

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Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Supplie¹,

May²,

Stange³

et al. 2014

Journal of Applied Physics

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Articles you may be interested inLinear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs J. Appl. Phys. 114, 033501 (2013); 10.1063/1.4812369In situ control of As dimer orientation on Ge (100) Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP 0.98 N 0.02 /Si(100) surface preparation to established P-and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP 0.98 N 0.02 in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP 0.98 N 0.02 /Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk. V C 2014 AIP Publishing LLC.

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GaP(001) and InP(001): Reflectance anisotropy and surface geometry

Cited by 53 publications

References 40 publications

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

Structure and Energetics of P-rich GaP(001) Surfaces

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

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