Gap optique et indice de réfraction du silicium amorphe hydrogéné à 95 K et 295 K

Ferraton, J.P.; Ance, C.; Donnadieu, A.

doi:10.1016/0040-6090(89)90585-3

Cited by 16 publications

(6 citation statements)

References 21 publications

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“…T, = 240" C, 0.1 % B2&:SiH4), the absorption coefficient characteristics in this energy range parallel those of the intrinsic films while the profiles of films deposited at higher T, and doping gas ratios (e.g. T, = 280" C, 1 % B2H6:SiH4) show a large increase.This large increase in the low energy absorption is consistent with earlier reported studies where only high doping ratios (> 1%) were investigated[5,6]. It is important to accurately characterize the absorption coefficients in these materials as this information is necessary to calculate the amount of light entering the intrinsic layer during accurate modelling.…”

supporting

confidence: 88%

“…The most striking effect on the optical properties is that the absorption coefficient increases much more rapidly with T, than for undoped a-Si:H. These general trends were observed in previous investigations[5, 6,11], but the results were either cursory, did not focus on the temperature range .where device quality a-Si:H is obtained, or were carried out only at high doping gas ratios (> 1 %). A detailed analysis of the changes in the absorption coefficient with T, and doping gas ratio was carried out with some of the results shown in Fig.…”

Section: Optical Properties Of Boron Doped A4i:hsupporting

confidence: 52%

“…Previous investigations of boron doped a-Si:H were focused either upon the effects o f changing the dopant concentrations in the fiIms [3,4] or changing the substrate temperature, T, [5,6]. These earlier investigations found that heavily boron doped a-Si:H had a much smaller optical gap[5] and a larger mid-gap density of states[7] than lhe intrinsic films.…”

Section: Introductionmentioning

confidence: 99%

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The effect of p-layers deposited under varying conditions on hydrogenated amorphous silicon p-i-n homojunction solar cell performance

Dawson

Nag

Wronski

et al.

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)

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Substrate temperature and doping gas ratios are used to vary the boron and hydrogen content of p-iype hydrogenated amorphous silicon (a-Si:H). The effects of the doping gas ratio (B2H6:SiH4) and substrate temperature have been studied and conditions were used such as to give oplical gaps and dark conductivity activation energies which changed by as much as 0.3 eV while the difference between them remained unchanged. The effects of changes in the absorption coefficient and activation energy on p-i-n solar cell device characteristics are quantified by comparing the measured thin film properties with the collection efficiencies and dark and light current-voltage characteristics.

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supporting

confidence: 88%

Section: Optical Properties Of Boron Doped A4i:hsupporting

confidence: 52%

Section: Introductionmentioning

confidence: 99%

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The effect of p-layers deposited under varying conditions on hydrogenated amorphous silicon p-i-n homojunction solar cell performance

Dawson

Nag

Wronski

et al.

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)

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“…In This leads us to a study of the determination of hydrogen concentration in these films. We wish to point out here that the experimental det,ails of the preparation of the films and study of their properties have been discussed elsewhere [26].…”

Section: E and Nv Have Been Evaluated Using Expressionsmentioning

confidence: 99%

Penn‐like model calculations application to hydrogenated amorphous silicon films prepared by glow discharge

Ravindra

Ance

Ferraton

et al. 1983

Physica Status Solidi (b)

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Recent model calculations are studied of Ance e t al. concerning the valence electron density and hydrogen concentration in hydrogenated amorphous silicon films prepared by glow discharge decomposition of silane. This study is essentially necessitated by the fact that the model of Ance et al. yields values of Penn gap which are fairly large when compared to energies corresponding to peaks in the spectra of the imaginary part of the dielectric constant. Also a method is proposed to evaluate the density of the films. The densities hence determined are shown to be in accord with available experimental data. In the passing, results of the electronic polarizability of these films are also reported. Es werden die neueren Modellrechnungen von Ance e t nl. iiber die Dichte der Valenzelektronen undWasserstoffkonzentration in hydrogenisierten amorphen, durch Glimmentladungszersetzung von Silan hergest,ellten Siliziumschichten untersucht. Dies wird wesentlich durch die Tatsache erforderlich, daI3 das Modell von Ance et al. Werte fur das Penn-Gap liefert, die im Vergleich zu den Energien, die den Maxima in den Spektren des Imaginiirteils der Dielektrizitatskonstante entsprechen, ziemlich groB sind. Es wird eine Methode zur Berechnung der Schichtdichten vorgeschlagen. Die so bestimmten Dichten befinden sich in Ubereinstimmung mit vorhandenen experimentellen Werten. Des weiteren werden Ergebnisse der elektronischen Polarisierbarkeit dieser Schichten mitgeteilt.

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“…&(O) -13. Applications to a-SkHRecently, we have published[5] results concerning optical properties a t room temperature of amorphous silicon films, prepared by glow discharge decomposition of silane, for temperatures ranging from T, = 350 to 50 "C and then a t different hydrogenconcentrations [ 141.These results about ~( 0 ) -and Edvalues are reported in Table3. From them and from relation (8) %,-values are calculated.…”

mentioning

confidence: 99%

Calculation Model for Valence Electrons and Hydrogen Concentration in a‐Si:H

Ance

Ferraton

Berger

et al. 1982

Physica Status Solidi (b)

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A simple model is developped to relate the valence electron number t o the dispersion energy Ed and the static dielectric constant ~( 0 ) .This model is applied to hydrogenated amorphous silicon films prepared by glow discharge decomposition of silane. It is shown that the variation of valence electron number and anion valency explain the variation of the dispersion energy. This model allows to determine the hydrogen concentration in a-Si : H films from two spectroscopic parameters E d and e(0). Ein einfaches Modell wird entwickelt, um die Valenzelektronenzahl mit der Dispersionsenergie E d und der statischen Dielektrizitttskonstante ~( 0 ) zu verknupfen. Dieses Modell wird auf hydrogenisierte amorphe Siliziumschichten angewqndet, die durch Glimmentladungsabbau von Silan hergestellt werden. Es wird gezeigt, da13 die Anderung der Valenzelektronenanzahl und der Anionenvalenz die Anderung der Dispersionsenergie erklaren. Diesea Modell erlaubt, die Wasserstoffkonzentration in a-Si: H-Schichten aus zwei spektroskopischen Parametern, Ed und E(O), zu bestimmen.

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Gap optique et indice de réfraction du silicium amorphe hydrogéné à 95 K et 295 K

Cited by 16 publications

References 21 publications

The effect of p-layers deposited under varying conditions on hydrogenated amorphous silicon p-i-n homojunction solar cell performance

The effect of p-layers deposited under varying conditions on hydrogenated amorphous silicon p-i-n homojunction solar cell performance

Penn‐like model calculations application to hydrogenated amorphous silicon films prepared by glow discharge

Calculation Model for Valence Electrons and Hydrogen Concentration in a‐Si:H

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