GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxy

Cornet, Charles; Silva, Mickael da; Levallois, Christophe; Durand, Olivier

doi:10.1016/b978-0-12-812136-8.00030-x

Cited by 6 publications

(5 citation statements)

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“…Moreover, the matrix elements correspond to sizable numerical values (Figure S19) on the same order as the ones for nonpolar modes at the Γ point (Table S4), thereby suggesting that the coupling to the localized polar modes is important for optoelectronic properties and also playing a role for hole transport. This can shed some light on the recent experimental observation of APBs benefiting carrier transport at room temperature. , Indeed, APBs are planar structures, not point defects, and therefore, vertical transport in the APB planes can take place. In the present work, APBs can be assimilated to effective quantum wells, forming planar conduction channels for carriers.…”

Section: Results and Discussionmentioning

confidence: 81%

“…This can shed some light on the recent experimental observation of APBs benefiting to carrier transport at room temperature. 44,45 Indeed, APBs are planar structures, not point defects and therefore, vertical transport in the APB planes can take place. In the present work, APBs can be assimilated to effective quantum wells forming planar conduction channels for carriers.…”

Section: Resultsmentioning

confidence: 99%

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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, (APB)) in an (In, Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified, by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first principles methods, leading to the prediction of a type II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of electron-phonon interaction to 2D vertically buried III-V homovalent nanoobjects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon and device applications with weakly polar semiconductors.

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Section: Results and Discussionmentioning

confidence: 81%

Section: Resultsmentioning

confidence: 99%

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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“…Finally, the presence of APBs is also expected to create intermediate bandgap energy levels. [20][21][22] STEM energy dispersive X-ray spectroscopy (EDS) measurements were carried out for elemental composition extraction. Chemical analysis of the GaP 0.67 Sb 0.33 on the Si photoanode is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Photoelectrochemical water oxidation of GaP_1−xSb_x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Alqahtani

Sathasivam

Chen

et al. 2019

Sustainable Energy Fuels

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“…Each sub-cell is designed to respond in a specific part of the solar spectrum. This concept was found to be the only one that was successfully commercialized among the other ways of high efficiency designs [5][6].…”

Section: Introductionmentioning

confidence: 99%

Simulation and performance optimization of GaAs/GaSb tandem solar cell

Kharchich

Khamlichi

2022

MATEC Web Conf.

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Multi-junction solar cells provide the highest efficiencies. Intense research activity is being held with the aim to increase the actual performance reached by these cells. Harvesting most of the solar spectrum and finding the optimum design variables in terms of structural parameters and carrier concentrations are the main topics being investigated by solar developers. The GaAs/GaSb based dualjunction solar cell was found suitable for the best absorption of solar spectrum. In this work, an optimization approach was applied to fix the optimal parameters of the top base layer of this structure that provide the maximum efficiency. To achieve this, a series of numerical simulations were carried out by means of Silvaco ATLAS software under standard AM1.5G spectrum where thicknesses and doping levels of the top base layer were varied. The obtained optimal structure yields a power conversion efficiency of 41.65% with open circuit voltage of 1.78 V, short circuit current of 35.72 mA / cm2 and fill factor of 90.16%. The performance of the GaAs/GaSb dual-junction solar cell was further improved by using sunlight concentration. A conversion power efficiency of 45.78% at 60sun light concentration was attained. It was found also that above this level of concentration ratio the detriment effect of shunt resistance dominates.

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GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxy

Cited by 6 publications

References 91 publications

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Photoelectrochemical water oxidation of GaP_1−xSb_x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Simulation and performance optimization of GaAs/GaSb tandem solar cell

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GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxy

Cited by 6 publications

References 91 publications

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Photoelectrochemical water oxidation of GaP1−xSbx with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Simulation and performance optimization of GaAs/GaSb tandem solar cell

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Product

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Photoelectrochemical water oxidation of GaP_1−xSb_x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting