Gaps tunable by electrostatic gates in strained graphene

Low, Tony; Guinea, F.; Katsnelson, M. I.

doi:10.1103/physrevb.83.195436

Cited by 137 publications

(113 citation statements)

References 57 publications

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“…For non-Bravais lattices, the basis atoms introduce additional degrees of freedom, significantly modifying the relation between strain and displacement. With few exceptions [5,10], this fact is typically neglected in the literature on electronic properties of deformed 2d materials [3,4,6,7,[28][29][30]. We show that under an applied strain the bond vectors of 2d materials generally transform as r ij → (I 3 + u) · r ij + ∆ + ∆ ⊥ẑ .…”

Section: Discussionmentioning

confidence: 91%

Strain–displacement relations for strain engineering in single-layer 2d materials

Midtvedt

Lewenkopf

2016

2D Mater.

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We investigate the electromechanical coupling in 2d materials. For non-Bravais lattices, we find important corrections to the standard macroscopic strain -microscopic atomic-displacement theory. We put forward a general and systematic approach to calculate strain-displacement relations for several classes of 2d materials. We apply our findings to graphene as a study case, by combining a tight binding and a valence force-field model to calculate electronic and mechanical properties of graphene nanoribbons under strain. The results show good agreement with the predictions of the Dirac equation coupled to continuum mechanics. For this long wave-limit effective theory, we find that the strain-displacement relations lead to a renormalization correction to the strain-induced pseudo-magnetic fields. Implications for nanomechanical properties and electromechanical coupling in 2d materials are discussed.

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Section: Discussionmentioning

confidence: 91%

Strain–displacement relations for strain engineering in single-layer 2d materials

Midtvedt

Lewenkopf

2016

2D Mater.

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“…It was shown that the pseudo-magnetic field generated in this manner produces regions with opposite sign of the pseudo-magnetic field 7,15,17 . Strain generated by bumps and other deformations will have an effect on the transport properties because of the generated pseudo-magnetic field 6,[18][19][20][21][22][23][24] . Furthermore, imperfections of the substrate are often unavoidable and thus the formation of bumps and bends represents a common problem in the device fabrication process.…”

Section: Graphenementioning

confidence: 99%

Strained graphene Hall bar

Milovanović

Peeters²

2016

J. Phys.: Condens. Matter

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The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resistance, R B , around zero-magnetic field and the occurrence of side-peaks in R B . These features are explained as a consequence of bump-assisted scattering of electrons towards different terminals of the Hall bar. Using these features we are able to give an estimate of the size of the bump. Additional oscillations in R B are found in the quantum description that are due to the population/depopulation of Landau levels. The bump has a minor influence on the Hall resistance even for very high values of the pseudo-magnetic field. When the bump is placed outside the center of the Hall bar valley polarized electrons can be collected in the leads.

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“…The periodic perforation of a graphene sheet, to form a so-called graphene antidot lattice (GAL) or nanomesh, is one such implementation of the latter technique . Periodic gating [39,40] and strain [41,42] are other possible routes that have been suggested.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport in disordered graphene antidot lattice devices

Power

Jauho

2014

Phys. Rev. B

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Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise systems, but fabrication methods will introduce significant levels of disorder in the shape, position and edge configurations of individual antidots. We calculate the electronic transport properties of a wide range of finite graphene antidot devices to determine the effect of such disorders on their performance. Modest geometric disorder is seen to have a detrimental effect on devices containing small, tightly packed antidots which have optimal performance in pristine lattices. Larger antidots display a range of effects which strongly depend on their edge geometry. Antidot systems with armchair edges are seen to have a far more robust transport gap than those composed from zigzag or mixed edge antidots. The role of disorder in waveguide geometries is slightly different and can enhance performance by extending the energy range over which waveguiding behaviour is observed.

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Gaps tunable by electrostatic gates in strained graphene

Cited by 137 publications

References 57 publications

Strain–displacement relations for strain engineering in single-layer 2d materials

Strain–displacement relations for strain engineering in single-layer 2d materials

Strained graphene Hall bar

Electronic transport in disordered graphene antidot lattice devices

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