Gas-assisted blade-coating of organic semiconductors: molecular assembly, device fabrication and complex thin-film structuring

Mejri, Hadhemi; Haidisch, Anika; Krebsbach, Peter; Seiberlich, Mervin; Hernandez‐Sosa, Gerardo; Perevedentsev, Aleksandr

doi:10.1039/d2nr05947a

Cited by 3 publications

(3 citation statements)

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“…Intermolecular S···N interactions can also be expected as seen in other thiadiazole-containing molecules, − through which molecular ordering can be regulated. The high NIR fluorescence quantum yields of certain TTD small molecules indicate potential nonradiative recombination suppression in OPD applications, leading to a low level of dark saturation current . Moreover, good photostability was also reported for TTD molecules, a prerequisite for long-term OPD device performance reliability.…”

Section: Introductionmentioning

confidence: 99%

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor

Zhang,

Mao,

Yuan

et al. 2024

ACS Appl. Mater. Interfaces

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The nonclassical ten-pi-electron 5,5-fused thieno [3,4-c]thiadiazole (TTD) unit is an excellent building block for constructing sub-silicon-band gap organic semiconductors. However, no small molecule acceptor (SMA) materials based on TTD have been reported despite the fact that high-sensitivity near-infrared organic photodetectors (OPDs) are generally achieved by using SMAs. In this work, we report a TTD-based narrow band gap (0.95 eV) SMA material TTD(DTC-2FIC) 2 with strong near-infrared absorption. Employing PTB7-Th as a donor, OPDs based on TTD(DTC-2FIC) 2 exhibit an optimized responsivity of 0.095 (±0.007) A W −1 at 1100 nm and sustain a decent responsivity of 0.074 (±0.008) A W −1 at 1200 nm. Moreover, a good specific detectivity over 1 × 10 11 Jones is achieved at a wavelength of 1200 nm. Detailed characterizations imply that the performance of TTD(DTC-2FIC) 2 -based OPDs may be substantially improved by choosing lower-mixing donors with shallower energy levels. This work demonstrates that SMAs incorporating TTD as the core unit hold promise for constructing high-sensitivity sub-silicon-band gap OPDs.

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Section: Introductionmentioning

confidence: 99%

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor

Zhang,

Mao,

Yuan

et al. 2024

ACS Appl. Mater. Interfaces

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“…[12,[14][15][16][17] Recently, meniscus-guided printing has made great progress in yielding organic semiconductor films with single-crystalline domains. [12] However, these singlecrystalline domains are usually grown in a manner of parallel ribbon-like and branched morphology, [18][19][20][21][22][23][24][25][26][27][28] giving rise to abundant structural defects (cracks, voids, and unordered orientation) transverse to the printing direction that restrain the formation of the intact films over a large area. Despite molecular structures are specifically tailored for decreasing this strongly anisotropic crystallization behavior, [12,15,16] the fabrication of structural defectfree and large-area OSCFs has remained elusive.…”

Section: Introductionmentioning

confidence: 99%

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

Sheng,

Deng,

Ren

et al. 2024

Advanced Materials

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Advanced organic electronic technologies have put forward a pressing demand for cost‐effective and high‐throughput fabrication of organic single‐crystal films (OSCFs). However, solution‐printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large‐scale and high‐performance organic electronics. Here, we elucidate that these structural defects are mainly originated from printing flow‐induced anisotropic growth, an important factor that has been overlooked for too long. In light of this, we propose a surfactant‐additive printing method to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s−1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V−1 s−1, which is one of the highest values for flexible organic field‐effect transistor arrays. Moreover, we realize large‐scale OSCF‐based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles. Our work provides profound insights into breaking the limitation of flow‐induced anisotropic growth and opens new avenues for printing large‐scale organic single‐crystal electronics.This article is protected by copyright. All rights reserved

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“…The above-mentioned solvent-based extraction method is illustrated for directionally oriented, anisotropic P3HT films fabricated by gas-assisted blade-coating of solutions comprising a crystallizable cosolvent. , ( N.B . Additional solvent-extraction data for in-plane isotropic blend-doped P3HT films reaching a conductivity of 110 S cm –1 , shown in Figure S21, confirms the generality of this method.)…”

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confidence: 99%

A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

Zapata-Arteaga,

Perevedentsev,

Prete

et al. 2024

ACS Energy Lett.

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Chemical doping of organic semiconductors is an essential enabler for applications in electronic and energy-conversion devices such as thermoelectrics.Here, Lewis-paired complexes are advanced as high-performance dopants that address all the principal drawbacks of conventional dopants in terms of limited electrical conductivity, thermal stability, and generality. The study focuses on the Lewis acid B(C 6 F 5 ) 3 (BCF) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) bearing Lewis-basic −CN groups. Due to its high electron affinity, BCF:F 4 TCNQ dopes an exceptionally wide range of organic semiconductors, over 20 of which are investigated. Complex activation and microstructure control lead to conductivities for poly(3-hexylthiophene) (P3HT) exceeding 300 and 900 S cm −1 for isotropic and chain-oriented films, respectively, resulting in a 10 to 50 times larger thermoelectric power factor compared to those obtained with neat dopants. Moreover, BCF:F 4 TCNQ-doped P3HT exhibits a 3-fold higher thermal dedoping activation energy compared to that obtained with neat dopants and at least a factor of 10 better operational stability.

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Gas-assisted blade-coating of organic semiconductors: molecular assembly, device fabrication and complex thin-film structuring

Abstract: The competitive performance of optoelectronic devices based on advanced organic semiconductors increasingly calls for suitably scalable processing schemes to capitalise on their application potential. With performance benchmarks typically established by...

Cited by 3 publications

References 50 publications

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor

Breaking Fundamental Limitation of Flow‐Induced Anisotropic Growth for Large‐Scale and Fast Printing of Organic Single‐Crystal Films

A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

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