Gas-assisted etching with focused ion beam technology

Casey, J. A.; Doyle, Andrew F.; Lee, Randall G.; Stewart, Diane K.

doi:10.1016/0167-9317(94)90053-1

Cited by 42 publications

(26 citation statements)

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“…Reactive gases commonly used in a FIB GAE processes are, for example, XeF 2 for SiO 2 , Si 3 N 4 , and W etching, Cl 2 and I 2 for aluminum and silicon, O 2 for photoresists, H 2 O for diamond, Br 2 for chromium [6][7][8][9][10]. The ion beam causes a reaction between the adsorbed gas molecules and the substrate atoms, forming volatile compounds and thus an enhanced removal of material.…”

Section: Introductionmentioning

confidence: 99%

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Stanishevsky

Melngailis

2006

MRS Proc.

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Focused ion beams (FIBs) provide maskless prototyping of 2-D and 3-D micro-and nanostructures for many applications in optics, electronics, and medicine. In many situations, the chemical enhancement of the FIB sputtering process is used to increase the selectivity and removal rate of different materials.In this study, Ti, TiO 2 , and TiN thin films of different origin were patterned using Ga + FIB without or with chemical enhancement (or gas assisted etching, GAE). The effects of ion beam parameters and gas ambient on the sputtering yields, etching selectivity, roughening at the film/substrate interface, sub-micron and nano-scale patterning of these materials were investigated.Several gases, including XeF 2 , CO 2 , chlorine, bromine, and oxygen, were employed. The largest increase of the sputtering yield was achieved with XeF 2 gas, whereas CO 2 and oxygen depleted the sputtering rate. Among all gases tested, the Br 2 FIB GAE produced the best uniformity of the material removal. It was found that the use of bromine gas provides the best selectivity between the titanium oxide and pure titanium or its nitride.

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Section: Introductionmentioning

confidence: 99%

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Stanishevsky

Melngailis

2006

MRS Proc.

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“…This corresponds to an enhancement of the sputtering rate of a factor of seven or so, which is at the lower limit of the range of values reported for the Si/XeF 2 , W/XeF 2 and SiO 2 /XeF 2 systems. The values for these systems are 7-12 [17]. Figure 7 displays the sputtering rate R plotted as a function of t r .…”

Section: Sputtering Ratementioning

confidence: 99%

“…Furthermore, chemical etching and physical sputtering yield per ion n can be estimated using equation (17): n is the yield per ion; ρ = 4.5 g cm −3 is the density of Ti; M A = 47.9 g mol −1 is the atomic weight of Ti; e is the elementary charge.…”

Section: Theoretical Calculationsmentioning

confidence: 99%

“…This leads to an enhanced milling rate but also reduces redeposition effects [16][17][18]. The use of XeF 2 gas has been successful for different materials such as diamond [19], Si, SiO 2 , and W [17], because the generated fluorides of this materials are volatile. The possibility of gas assisted etching of titanium (Ti) using an e-beam and XeF 2 was also shown by DeMarco et al [20].…”

Section: Introductionmentioning

confidence: 99%

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Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

et al. 2006

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The fabrication of interdigitated titanium nanoelectrode arrays of 50 nm in width and spacing is described in this work. The nanoarrays have been realized using a Ga + focused ion beam (FIB). FIB milling is typically accompanied by redeposition of removed material, which represents an important hindrance for milling closely spaced nanostructures. Redeposition effects have been reduced by means of XeF 2 gas assistance, which increases the etch yield by a factor of seven compared with pure ion milling. Furthermore, we used a simple adsorption model, which led to the conclusion that dwell time and refresh time should be <500 ns and >30 ms, respectively, for optimized XeF 2 assisted Ti milling. The measured resistance R of the electrodes is higher than 1 G .

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“…The introduction of gas-assistedetch chemistries and dielectric deposition enabled major advancement in FIB micro-machining geometry scaling and re-wiring capabilities. [3] The next paradigm shift in circuit edit technology occurred in 1996 with the introduction of the first Flip-Chip FIB tool and the ability to modify circuitry from the silicon backside [4] . The backside circuit edit FIB combined the navigational accuracy of a E-Beam mask writing tool (e.g., differential laser interferometer stage & advanced pattern generator) with additional capabilities such as an in-vacuum infra-red microscope (to see through the silicon substrate) and novel gas chemistry delivery systems to allow for machining in the silicon substrate.…”

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confidence: 99%

Focused Ion Beam Circuit Edit–A Look into the Past, Present, and Future

et al. 2011

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At Spring-COMDEX in April of 1989 Intel introduced and demonstrated the first 80486 Microprocessor ™. The i486DX ™, as it was later known, was Intel's first x86 processor with over a million transistors and ran at clock speed of a whopping 50 MHz, both of which were very impressive milestones for that time. As Andy Grove stood on the podium in front of the COMDEX audience demonstrating Intel's latest product booting OS/2, DOS-Windows, and other operating systems on various platforms, there was an interesting artifact about those handful of i486 processors running on the stage, -all of them had a major circuit modification performed on them using focused ion beam (FIB) mill. In fact, without this FIB circuit edit, the parts were rendered completely nonfunctional and the demos that wooed the COMDEX audience that day would not have been possible. This example illustrates the power and unique capability of FIB circuit modification.

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Gas-assisted etching with focused ion beam technology

Cited by 42 publications

References 1 publication

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

Focused Ion Beam Circuit Edit–A Look into the Past, Present, and Future

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Gas-assisted etching with focused ion beam technology

Cited by 42 publications

References 1 publication

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

Interdigitated 50 nm Ti electrode arrays fabricated using XeF2enhanced focused ion beam etching

Focused Ion Beam Circuit Edit–A Look into the Past, Present, and Future

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Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching