Gas immersion laser doping (GILD) for ultra-shallow junction formation

Kerrien, G.; Sarnet, T.; Débarre, D.; Boulmer, J.; Hernández, Miguel; Laviron, C.; Séméria, M. N.

doi:10.1016/j.tsf.2003.11.151

Cited by 23 publications

(23 citation statements)

References 5 publications

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“…GILD process has already shown unusual results in silicon technology since it allows synthesizing ultra shallow boron doped junctions with very high concentrations (up to 8 %) and boxlike profiles [10,11] Experiments were performed on Si (001) oriented samples in an UHV reactor (10 -9 mbar). The laser processed area (≈ 2.3 x 2.3 mm 2 ) is exposed to 500 to 10000 sequences (gas injection and laser pulse) with a constant laser energy density above the melting threshold (1290 mJ/cm 2 which corresponds to a melting duration of 80 ns).…”

Section: Methodsmentioning

confidence: 99%

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Kociniewski

Fossard

Perrossier

et al. 2011

Phys. Status Solidi (c)

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We report on the synthesis of SiGe layers on silicon by using a pulsed laser processing technique (Gas Immersion Laser Doping) where GeCl4 gas molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. In‐situ real‐time measurements of the transient reflectivity of a laser diode reveal that SiGe is formed. Structural characterization of the SiGe layers by X‐ray diffraction evidences that pseudomorphic SiGe layers are obtained. Moreover, we demonstrate that Ge concentration saturates at about 16% in the strained layers and that a relaxation process occurs when samples are exposed to 4000 laser pulses or more (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Kociniewski

Fossard

Perrossier

et al. 2011

Phys. Status Solidi (c)

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“…This technique can also be applied to in situ impurity doping by diffusion near the melting temperature of Si in the presence of impurity species in atmosphere near the heated surface, as demonstrated in gas immersion laser doping (GILD). [18][19] As a surface heating method, pulsed XeCl laser-based technique has been proposed and demonstrated for shallow junction implant anneal. Talwar et al 8 reported that they were able to melt an amorphized implant layer and achieved abrupt shallow junctions in the range of 40 ∼ 110 nm by radiating focused 308 nm laser beam (18 ns in pulse width and 0.55 ∼ 0.90 J/cm 2 in power density).…”

Section: Ecs Journal Of Solid State Science and Technology 5 (2) P1-mentioning

confidence: 99%

Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Yoo¹,

Kang²

2015

ECS J. Solid State Sci. Technol.

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A surface heat-treatment method for semiconductor wafers using a xenon arc lamp is described. High absorption coefficients of silicon wafers in ultra violet (UV) region and short process time made selective surface heating possible. The surface melting of entire 150 mm diameter Si wafers was demonstrated in less than 2 s at a lamp power of 15 kW. By focusing UV light into a limited area on Si wafer surface, surface melting of a selectively exposed area was demonstrated at a much lower lamp power. The surface temperature ramp rate is estimated to be on the order of 1000 • C/s. Si wafers, with various implanted species (P + , As + , B + and BF 2 + ) and energies (1 keV-70 keV), were annealed for implant damage recovery and electrical activation using the Xe lamp under different scanning speeds. Sheet resistance and secondary ion mass spectroscopy (SIMS) depth profiling measurement results from the scanning rapid thermal annealing (RTA) successfully demonstrated the feasibility of the technique in semiconductor RTA processing applications. Electrical activation with desired levels of dopant diffusion can be achieved by optimizing process variables such as lamp power, distance between the lamp and Si wafer, area of light exposure and scanning speed. Rapid thermal annealing (RTA) is one of the hottest areas of interest in advanced Si device fabrication. Typical RTA systems employ either halogen lamps or a resistively heated furnace or susceptor as heat source. The lamp-based RTA systems have an excellent lot size flexibility as well as flexibility in controlling a process temperature profile while they have very poor energy efficiency and require complicated temperature measurement/control algorithms.1 Although the resistive heating-based RTA systems do not provide the same lot size flexibility, they provide equivalent process results at much higher energy efficiency. 2A very fast wafer heating and cooling, called "spike anneal" is proposed to electrically activate implant species while suppressing unwanted dopant diffusion during (ultra)shallow junction implant anneal.3,4 However, conventional tungsten halogen lamp-based RTA techniques heat the Si wafer and wafer temperature ramp up and ramp down rate are limited to ∼200• C/s and ∼90 • C/s, due to the balance amongst the heating/cooling characteristics of tungsten filaments, heat capacity of Si wafer and heat loss from the wafer, and so on. Increase in lamp power and/or number of lamps simply do not improve wafer temperature ramp up and ramp down characteristics. 5,6 Large size wafers make the fast wafer heating and cooling more difficult in conventional tungsten halogen lamp-based RTA techniques. The spike anneal using Ar arc lamp has been demonstrated. The reported wafer temperature ramp rate and cooling rate were 400• C/s and 180 • C/s, respectively. 5,7In advanced Si devices, all the active device regions are located at the top surface (up to 1 μm from the surface) of 600 ∼ 800 μm thick Si wafers. Selective surface heat-treatment is ideal from the viewpoint of f...

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“…Furthermore, the introduction of germanium and IV-IV alloys in the CMOS technology, for microelectronics or optoelectronics, reveals that germanium doping is facing specific difficulties, such as fast dopant diffusion induced by thermal annealing (specially in the case of phosphorus), and low active dopant concentrations due to dopant solid-solubility limitation [1][2][3]. In this context, laser doping techniques appear as attractive solutions to realize thermal annealing after dopant implantation (laser thermal processing (LTP) or annealing (LTA) [4][5][6][7][8]), or as an in situ doping process (gas immersion laser doping (GILD) [9][10][11][12][13]). Most of the LTP and GILD published results concern silicon, while only few publications deal with LTP experiments on germanium [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

et al. 2008

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Gas immersion laser doping (GILD) for ultra-shallow junction formation

Cited by 23 publications

References 5 publications

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

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