Gas permeation properties of silicon oxynitride thin films deposited on polyether sulfone by radio frequency magnetron reactive sputtering in various N2 contents in atmosphere

A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film

“…The results showed that the SiN x O y film has a lower oxygen transmission rate than that of the SiO 2 film, because the use of nitrogen plasma instead of oxygen suppresses the formation of defects induced by peroxide, and the increase in nitrogen content greatly enhances the density of SiN x O y film, forming a composite film with excellent gas barrier performance. Liu et al [126] deposited a SiN x O y film on PES by RF magnetron sputtering in Ar/N 2 atmosphere as a barrier to prevent water vapor permeation. The experimental results showed that the RF power is 250 W. At the fixed film pressure of 1.6 Pa, with the deposition time of 30 min, the 100% N 2 content, and the absence of substrate bias, the water vapor transmission rate of the composite film is two orders of magnitude smaller than that of the uncoated PES.…”