Gas-phase doping of silicon with sulfur

Astrov, Yu. A.; Portsel, L. М.; Lodygin, А. N.; Shuman, V. B.

doi:10.1088/0268-1242/26/5/055021

Cited by 21 publications

(18 citation statements)

References 18 publications

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“…We investigated the QZE in bulk-doped silicon with single substitutional donors Bi, Sb or P [35,36], the single interstitial donor Li, substitutional double donors S [37,38] and Se [33,39], the interstitial double donor Mg [40], and double donor complexes S 2 and Se 2 . The doping of each was in the range 1 × 10 14 −2 × 10 15 cm −3 , low enough that the distance between the donors is far larger than the orbit radius of any of the states of interest.…”

Section: Methodsmentioning

confidence: 99%

Radii of Rydberg states of isolated silicon donors

Litvinenko

et al. 2018

Phys. Rev. B

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We have performed high field magnetoabsorption spectroscopy on silicon doped with a variety of single and double donor species. The magnetic field provides access to an experimental magnetic length, and the quadratic Zeeman effect, in particular, may be used to extract the wave-function radius without reliance on previously determined effective mass parameters. We were, therefore, able to determine the limits of validity for the standard one-band anisotropic effective mass model. We also provide improved parameters and use them for an independent check on the accuracy of effective mass theory. Finally, we show that the optically accessible excited-state wave functions have the attractive property that interactions with neighbors are far more forgiving of position errors than (say) the ground state.

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Section: Methodsmentioning

confidence: 99%

Radii of Rydberg states of isolated silicon donors

Litvinenko

et al. 2018

Phys. Rev. B

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“…From the latter it was possible to determine the concentration of the introduced deep donor Mg centers and their compensation by acceptors. The procedure is similar to that applied for the sulfur deep donor in Si [17] and includes fitting of the solution of the electroneutrality equation [18] to the set of Hall data points. Peculiarities of statistics of the n-type semiconductor doped with double donor deep impurity [19,20] were taken into account, when solving the electroneutrality equation.…”

Section: A Sample Preparationmentioning

confidence: 99%

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

et al. 2016

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Subnanosecond dynamics of optically excited electrons bound to excited states of neutral magnesium donor centers in silicon has been investigated. Lifetimes of nonequilibrium electrons have been derived from the decay of the differential transmission at photon energies matching the intracenter and the impurity-to-conduction band transitions. In contrast to hydrogenlike shallow donors in silicon, significantly longer lifetimes have been observed. This indicates weaker two-phonon and off-resonant interactions dominate the relaxation processes in contrast to the single-intervalley-phonon-assisted impurity-phonon interactions in the case of shallow donors in silicon.

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“…At room temperature, due to thermal activation almost all centers are in a single positive charge state Mg + , while only a small fraction of them is in the double charged Mg ++ state. To convert the electron concentration profile obtained in the experiment into the distribution of magnesium, N Mg ( x ), we use the approach developed earlier to process the Hall effect data for the double‐charge donors. Namely, for each point of the profile of electron concentration, N Mg density is calculated.…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientmentioning

confidence: 99%

“…n‐Si with a resistivity of 8 × 10 3 Ω · cm has been used as an initial material. To find concentration of Mg i centers in the sample, the measured temperature dependence of concentration of free electrons n was processed using the statistics of an n‐type semiconductor doped with a double donor impurity; for details see .…”

Section: Volume‐doped Samples Prepared From Dislocation‐free Siliconmentioning

confidence: 99%

Diffusion doping of silicon with magnesium

Astrov

Shuman

Portsel

et al. 2017

Physica Status Solidi (a)

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Doping of silicon with magnesium is investigated by a sandwich diffusion technique. Temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000-1200 8C is determined. It obeys the Arrhenius behavior over the range of 600-1200 8C, when the data obtained earlier for the lower temperatures are taken into consideration. Preliminary results on Mg diffusion in the dislocated crystals are also presented. The dislocation-free Si:Mg samples are investigated with the Hall-effect measurements and the low-temperature Fourier spectroscopy. A decrease in concentration of Mg interstitials (about 15%) has been observed after 31 months of the samples storage at room temperature, when a commercially available FZ silicon was used as a starting material. The effect of the samples degradation is proposed to be due to a formation of Mg-O complexes. When using a special silicon purified from oxygen and carbon with concentrations below or equal to 1.5 Â 10 14 and 5 Â 10 14 cm À3 , respectively, a decrease in the density of interstitial magnesium has not been noticed during this period. The storage of Si:Mg samples prepared from pure silicon gives rise to the formation of an unknown center, whose ionization energy is between the corresponding values for the interstitial Mg 0 centers and (Mg-O) 0 complexes.

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Gas-phase doping of silicon with sulfur

Abstract: The high-temperature gas-phase doping of silicon with sulfur has been studied at various sulfur vapor pressures. It is shown that the content of one-and two-atom sulfur-related deep donors in the semiconductor can be quantitatively controlled by varying the diffusant vapor pressure.

Cited by 21 publications

References 18 publications

Radii of Rydberg states of isolated silicon donors

Radii of Rydberg states of isolated silicon donors

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

Diffusion doping of silicon with magnesium

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