Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On 2002
DOI: 10.1109/iit.2002.1258044
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Gas-phase FT-IR characterization of ion implant process effluents

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“…Equivalent lengths of various components can be found in [6]. 2 The pressure drop across just the Novasafe is the difference between the tests in which the unit is and is not present (for a given pump speed). the culmination of each of these objectives.…”
Section: Design Featuresmentioning
confidence: 99%
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“…Equivalent lengths of various components can be found in [6]. 2 The pressure drop across just the Novasafe is the difference between the tests in which the unit is and is not present (for a given pump speed). the culmination of each of these objectives.…”
Section: Design Featuresmentioning
confidence: 99%
“…Depending on the type of ion implanter and the specific process recipe, the effluent concentrations of the gases listed in Table 1 can be significant. For example, typical levels of arsine and phosphine gas measured downstream on the roughing pumps range between 1 and 10 ppm [1,2]. Concentrations of boron trifluoride have been measured at levels up to 300 ppm [2].…”
Section: Introductionmentioning
confidence: 99%
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“…One of the major disadvantages of the BF 3 molecule is that it is very difficult to ionize (only ~15% is ionized and the rest is discarded). 1 Furthermore, under normal production conditions only ~30% of the ionized BF 3 is converted into B + ions that can be used for implantation. This results in low B + beam currents and become a cause of the following problems:…”
Section: Introductionmentioning
confidence: 99%