Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

“…The gas specie concentrations are calculated as the molar fraction of H 2 . Solid phases were not allowed to form in the calculations, Si 2 C, SiC 2 and CH 4 were not allowed to form since it has been reported that the reaction paths for the formation of these species are disabled by the use of C 2 H 4 as carbon precursor [28].…”

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

“…[10,11,21,22] In this work, attention has focused on the effect of the addition of HCl on the gas phase and surface kinetics in the framework of the more classic SiH 4 /C 3 H 8 /H 2 system, whose reactivity is already well known both in term of comprehensive and lumped kinetic mechanisms. [13,[23][24][25][26][27] The simple presence of HCl in the gas-reacting mixture produces an alteration of the species generated in the growth chamber, and the key point is characterized by the shift from Si to SiCl x H y as the most significant silicon gas species. Moreover, another important consequence of having HCl in the reacting gases is the etching of surface spots, thus achieving mirrorlike surfaces.…”

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

“…The role of the organosilicons in SiC CVD is not yet completely clarified. On the one hand, based on experimental studies it has been 6 suggested that organosilicons are not the major contributors to the growth [13]. On the other hand, simulation studies have suggested that contributions from Si 2 C and SiCH 2 are important for SiC growth [14].…”