Gas-sensing detection in the carbon phosphide monolayer: improving CO_x sensitivity through B doping

Abstract

A 2D materials engineering challenge is searching for a nanodevice capable to detect and distinguish gas molecules through electrical identification. Herein, the B-doped carbon phosphide monolayer (B-doped γ-CP) was explored...

Boron-doped graphene topological defects: unveiling high sensitivity to NO molecule for gas sensing applications

“…27 Complementarily, one can engineer the surface reactivity by doping, as demonstrated in the case of graphene with boron (B) atoms. 40,41 Note that B-doping is more effective in defects regions of the graphene lattice rather than in the pristine sheet. 29 Therefore, to further improve the properties of graphene-based sensing materials, it is important to consider the joint influence of defects and dopants.…”

Topological line defects in hexagonal SiC monolayer

“…Two-dimensional materials (2D) have been thoroughly explored over the last two decades due to their outstanding and tunable mechanical, thermal, magnetic, and electronic properties, which are typically rather different from those seen in their bulk counterparts. [1][2][3] Motivated by the synthesis of graphene in 2004, 4 a new field in science has emerged and a novel class of 2D materials based nanodevices has been proposed with a broad range of potential applications, including optoelectronic devices, [5][6][7][8] energy conversion, [9][10][11] gas sensing, [12][13][14][15][16][17][18] biosensing, [19][20][21][22] spintronics, [23][24][25][26][27][28] among others. In special, semiconductors composed of III-IV elements, such as gallium nitride (GaN), boron nitride (BN), and silicon carbide (SiC), have received a lot of attention because of the high-temperature device's application.…”