2018
DOI: 10.1088/2053-1591/aaede8
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Gas sensing performance of GaOOH and β-Ga2O3 synthesized by hydrothermal method: a comparison

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Cited by 20 publications
(15 citation statements)
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“…Gallium oxides, which have wide bandgap ranging from 4.2 to 4.9 eV, are particularly important semiconductor materials [11,14]. The Ga 2 O 3 material can be used for various device applications, such as gas sensors [15], catalysis [16], power and high voltage electronic 2 of 9 devices [13] because it has unique conductive properties and is electrically and thermodynamically stable [17][18][19]. Various polymorphs of Ga 2 O 3 as the photocatalysts in the degradation of organic dyes have been studied previously [11,[20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…Gallium oxides, which have wide bandgap ranging from 4.2 to 4.9 eV, are particularly important semiconductor materials [11,14]. The Ga 2 O 3 material can be used for various device applications, such as gas sensors [15], catalysis [16], power and high voltage electronic 2 of 9 devices [13] because it has unique conductive properties and is electrically and thermodynamically stable [17][18][19]. Various polymorphs of Ga 2 O 3 as the photocatalysts in the degradation of organic dyes have been studied previously [11,[20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…Then, the solution is placed in an autoclave for reaction under relatively high pressure and moderate temperature conditions. In most cases, gallium nitrate hydrate Ga(NO 3 ) 3 • x H 2 O [ 153 , 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 ] was used as the precursor for synthetizing Ga 2 O 3 nanomaterials. The chosen solution has been always distilled water, while other organic solvent such as alcohol [ 156 , 157 ] was also used.…”
Section: Preparation Methods Of Ga 2 O 3...mentioning
confidence: 99%
“…The morphology of these Ga 2 O 3 functional nanomaterials varies from one dimensional to three-dimensional nanostructures such as nanospheres, nanoflowers, nanowires, nanorods, nanobelts, and so on. These sensing materials showed high resistive response towards O 2 [ 109 ], CO [ 109 , 124 , 129 , 135 , 140 , 154 , 155 ], CO 2 [ 158 ], H 2 [ 113 , 132 , 176 ], NH 3 [ 159 , 162 , 177 ], NO 2 [ 125 , 126 , 128 , 141 , 160 , 161 , 176 ], VOCs such as C 2 H 6 O [ 117 , 123 , 141 , 168 ], C 3 H 6 O [ 123 , 133 , 157 ], C 3 H 8 O [ 120 ], and water vapor [ 127 , 130 , 134 ], as reported by many authors. The operating temperature can be low to room temperature due to the large specific surface area and robust properties of nanostructures.…”
Section: Ga 2 O 3 -Based Gas Se...mentioning
confidence: 99%
“…The various precursors used to synthesize Ga 2 O 3 nanomaterials were gallium acethylacetonate [ 201 ], commercial Ga 2 O 3 [ 45 ], Gallium(III) chloride aqueous solution [ 43 , 201 ], Ga metal [ 202 ], and gallium nitrate hydrate [ 21 , 203 , 204 , 205 , 206 , 207 , 208 , 209 , 210 , 211 , 212 , 213 , 214 , 215 , 216 , 217 , 218 , 219 , 220 , 221 , 222 , 223 , 224 , 225 , 226 , 227 , 228 , 229 , 230 , 231 ].…”
Section: Ga 2 O 3 Materials And...mentioning
confidence: 99%
“…R. Pilliadugula et al [ 216 ] synthesized α-Ga 2 O 3 (at 400–700 °C) and β-Ga 2 O 3 nanorods (900, 1000 °C) using gallium nitrate aqueous solution. The band gap of as-synthesized GaOOH and β-Ga 2 O 3 -1000 °C powders measured by diffuse reflectance spectra was 4.6 eV and 5.51 eV respectively.…”
Section: Ga 2 O 3 Materials And...mentioning
confidence: 99%