Gas-sensing properties of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- alloy films

Abstract

The effect of the gaseous medium composition on the electrically conductive properties of In2O3-Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100-550oC, the In2O3-Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3-Ga2O3 films to gases is proposed. Keywords: In2O3-Ga2O3, halide vapor-phase epitaxy, gas sensitivity.