Gas sensing properties of indium–gallium–zinc–oxide gas sensors in different light intensity

Chen, Kuen-Lin; Jiang, Guo-Jhen; Chang, Kai-Wei; Chen, Jau Han; Wu, Chau-Chung

doi:10.1016/j.ancr.2015.03.001

Cited by 37 publications

(30 citation statements)

References 23 publications

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“…The quality of the films analyzed via XRD, AFM, and UV-visible spectroscopy has been reported in previous studies [11,12]. …”

Section: Resultsmentioning

confidence: 92%

“…The RF power was 100 W. The crystallinity and morphology of the films were studied via XRD analysis; the results showed that the films were amorphous. The figure is shown in our previous reports [11,12]. …”

Section: Methodsmentioning

confidence: 96%

“…The ozone concentrations reported in this study were measured using the commercial ozone monitor. The details of the experimental schematics and processes have been reported in our previous study [11,12,20,21]. …”

Section: Methodsmentioning

confidence: 99%

“…We previously reported that the MOS amorphous indium-gallium-zinc oxide (InGaZnO 4 , a-IGZO) has potential as an excellent ozone gas sensor [11,12]. IGZO is an n -type semiconductor with a wide band gap (3.2–3.5 eV).…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

Jiang

Chang

et al. 2018

Sensors

Self Cite

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In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed a good response. The resistance change (ΔR) and sensitivity (S) were linearly dependent on the ozone concentration. The response time (T90-res), recovery time (T90-rec), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance–time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

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“…The quality of the films analyzed via XRD, AFM, and UV-visible spectroscopy has been reported in previous studies [11,12]. …”

Section: Resultsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 96%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

Jiang

Chang

et al. 2018

Sensors

Self Cite

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“…In the Connection level they present the already discussed advantages of being applicable in wide range of substrates, as flexible and transparent ones. Several applications have already been reported as gas sensors [10], touchpanels [11] and even biological sensors [12]. Integrated with the connection level, the technology can also be in the conversion level as they have performance that allow for the processing of the information received at the Connection level.…”

Section: Integration In Cyber Physical Systemsmentioning

confidence: 99%

TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Martins¹,

Barquinha²,

Goes³

2016

IFIP Advances in Information and Communication Technology

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Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs' simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.

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P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

Xiao,

Ge,

Jiang

et al. 2024

Symp Digest of Tech Papers

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Lanthanide‐doped indium zinc oxide (Ln‐IZO) was employed as the active channel layer (ACT) of thin film transistors (TFTs). The, Ln‐IZO, single‐1 ACT‐based TFT exhibited a high mobility and a small threshold voltage shift (∆VTH) within −1 V after 1‐hour negative bias temperature illumination stress (NBTIS). However, the corresponding ∆ VTH of 1‐hour positive bias temperature stress (PBTS) was as large as over 8 V. Optimized stacked structures of the ACT were adopted and obtained a significantly improved stability of PBTS. TFTs based on double‐2 ACT (Ln‐IZO/IGZO‐1) and triple‐2 ACT (Ln‐IZO/IGZO‐1/IGZO‐2) exhibited significantly lower ∆VTHs of 1.79 and 1.62 V under PBTS, respectively. Meanwhile, the excellent NBTIS stability with ∆VTH within −1 V was maintained for both double‐2‐ and triple‐2‐based TFTs. Furthermore, an appreciated VTH uniformity was obtained for triple‐2‐based TFTs, with a narrow range width of only 0.5 V. At the same time, we proposed a PBTS fitting model, using the stretched power‐law function, ∆ VTH = kTr for the deterioration of Ln‐oxide TFTs under long‐term operation. According to the proposed model, the ∆VTH could be maintained within 6 V even after 200‐hour PBTS for TFT based on triple‐2.

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Gas sensing properties of indium–gallium–zinc–oxide gas sensors in different light intensity

Cited by 37 publications

References 23 publications

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

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