2017
DOI: 10.1039/c7ra08137e
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Gas–solid reaction for in situ deposition of Cu3SbS4 on a mesoporous TiO2 film

Abstract: A novel, facile, in situ gas–solid reaction method has been successfully employed for the deposition of famatinite (Cu3SbS4) semiconductor on a mesosporous TiO2 film. The Cu3SbS4 film shows good photoresponse performance with a high potential as a photovoltaic absorber.

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Cited by 15 publications
(8 citation statements)
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“…However, the sample with TA-OLA as sulfur precursor gives two Raman vibrational bands, one at 319 cm –1 and another at 336 cm –1 corresponding to Cu 3 SbS 4 and CuSbS 2 phases, respectively (Figure ). It may be noted that Cu 3 SbS 4 phase gives five Raman active peaks at 246, 273, 319, 345, and 637 cm –1 , in which the 318 and 632 cm –1 peaks are assigned to the fundamental and overtone modes, respectively. However, we have observed only the fundamental peak at 319 cm –1 as a characteristic peak corresponding to Cu 3 SbS 4 , which is also reported earlier as a characteristic peak for the Cu 3 SbS 4 phase . The Raman data support the PXRD analysis on the phases of pure CuSbS 2 and CuSbS 2 –Cu 3 SbS 4 nanocomposite obtained while using S-OLA and TA-OLA as sulfur sources, respectively.…”
Section: Resultssupporting
confidence: 88%
“…However, the sample with TA-OLA as sulfur precursor gives two Raman vibrational bands, one at 319 cm –1 and another at 336 cm –1 corresponding to Cu 3 SbS 4 and CuSbS 2 phases, respectively (Figure ). It may be noted that Cu 3 SbS 4 phase gives five Raman active peaks at 246, 273, 319, 345, and 637 cm –1 , in which the 318 and 632 cm –1 peaks are assigned to the fundamental and overtone modes, respectively. However, we have observed only the fundamental peak at 319 cm –1 as a characteristic peak corresponding to Cu 3 SbS 4 , which is also reported earlier as a characteristic peak for the Cu 3 SbS 4 phase . The Raman data support the PXRD analysis on the phases of pure CuSbS 2 and CuSbS 2 –Cu 3 SbS 4 nanocomposite obtained while using S-OLA and TA-OLA as sulfur sources, respectively.…”
Section: Resultssupporting
confidence: 88%
“…Band gaps of each famatinite species ranged from 0.85 to 0.95 eV, with each dashed line plotting the linear region of each dopant back to the x -intercept (Figure b). These values are in line with the reported literature based on computational and experimental findings. ,− The band gap of Cu 3 SbS 4 (1) was approximately 0.91 eV, while the band gap of Cu 3 SbS 4 (2) was around 0.87 eV. Cu 2.70 Fe 0.30 SbS 4 , Cu 2.70 Zn 0.30 SbS 4 , and Cu 2.70 Mn 0.30 SbS 4 all have band gaps higher than either undoped famatinite.…”
Section: Resultssupporting
confidence: 90%
“…In the literature, a variety of synthetic strategies have produced famatinite, but the nature of the band gap has varied between direct and indirect (Table S6). ,,− , , ,,,,,,, For solution-phase methods that produce materials with indirect band gaps, annealing has been identified as a remedy to shift the dominant mode of charge excitation to be direct . All famatinite nanoparticles produced herein by this solution-phase, surfactant-free modified polyol method possessed a direct band gap without the need for an annealing step.…”
Section: Resultsmentioning
confidence: 99%
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“…The XPS spectrum of Li 6 SbS 5 I for Sb 3d in Figure e consists of two distinct deconvolution peaks corresponding to Sb–S bonding at 538.6 (green) and 529.4 eV (red). The minor peak at 531.3 eV (purple) was attributed to antimony in a Sb–O environment resulting from the hydrolysis reaction at the surface. As the Ge ratio in Li 6+ x Sb 1– x Ge x S 5 I increased, those peaks gradually decreased at the same binding energy. Meanwhile, a new peak related to the Ge–S bonding in Li 6+ x Sb 1– x Ge x S 5 I ( x = 0.5 and 0.75) at 1218.9 eV was observed in Figure S6. , The XPS spectrum of Li 6+ x Sb 1– x Ge x S 5 I ( x = 0.5 and 0.75) for Ge 3d in Figure f shows a new peak at 30.9 eV associated with the GeS 4 4– bonding, , which confirms the Ge substitution at the SbS 4 site.…”
mentioning
confidence: 99%