Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

“…1(a) and (b). The cross-hatch pattern is associated with the strain fields of misfit dislocations aligned with the [110] and [1][2][3][4][5][6][7][8][9][10] directions [7], which should be related to the different growth rates around the dislocations. Compared to sample A, the crosshatch patterns of sample B is less pronounced.…”

“…[1,2]. So far, In x Ga 1 À x As (x4 0.53) PDs are often fabricated on InP substrates, and the cutoff wavelength has been extended up to 2.9 μm by using gas source molecular beam epitaxy (GSMBE) [3]. When In x Ga 1 À x As PDs were transferred to GaAs substrates, the major difficulty would be that the nearly 4% increased lattice mismatch for the same indium content x [4,5].…”

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

“…Wavelength-extended In x Ga 1−x As/InP (0.53 < x < 1) PDs with cutoff wavelength more than 1.7 μm have been extensively investigated over the past decades due to their important applications in spatial remote sensing, earth observation, environmental monitoring, etc. [1,2]. However, for application in longer wavelength region, the indium content should be increased, which increases the lattice mismatch between high indium content InGaAs and InP substrate.…”

“…20 × 20 μm 2 AFM surface images of (a) sample A and (b) sample B. Reprinted with permission from IOP. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch http://dx.doi.org/10.5772/intechopen.70259 219 Trials to move In 0.83 Ga 0.17 As PD from InP to GaAs substrate Comparison of GaAs-and InP-based In 0.83 Ga 0.17 As PDs with different lattice mismatchesCurrently, most of the wavelength-extended InGaAs PD structures were grown on the InP substrate[2]. Even if a larger lattice mismatch will be introduced, GaAs may still be an attractive substrate for fabrication of InGaAs PDs with large size epitaxial wafers as well as FPAs with more pixels for the advantages of robustness, lower cost, and larger size.…”

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

“…Furthermore, as shown in Figure 2, the fingerprint absorption lines of several molecules also exist in this band, and therefore, semiconductor lasers in this band are of great interest in atmospheric pollution monitoring and medical diagnostics by using TDLAS [1,2]. As a monochromatic light source, the laser diode in this wavelength band is also desired for the evaluation of optoelectronic materials and devices such as photodetectors and focal plane arrays operated in this wavelength range, because in the measurement schemes wavelength match is very important to acquire their actual features [3,4].…”